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公开(公告)号：US09347125B2
公开(公告)日：2016-05-24
申请号：US14725849
申请日：2015-05-29
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
IPC分类号： C23F1/18 , C22F1/18 , H01L21/28 , C23F1/26 , H01L27/12 , H01L21/3213 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/44 , H01L21/32 , H05K3/06
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
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公开(公告)号：US09127368B2
公开(公告)日：2015-09-08
申请号：US14318815
申请日：2014-06-30
发明人： Seon-il Kim , In-Bae Kim , Hongsick Park , Jong-Hyun Choung , Inseol Kuk , Suckjun Lee , Giyong Nam , Youngchul Park , Inho Yu , Youngjin Yoon
IPC分类号： H01L21/3213 , C09K13/06 , C09K13/08 , C23F1/18
CPC分类号： C23F1/18 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1262
摘要： An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.
摘要翻译： 蚀刻剂包括基于蚀刻剂的总量约0.5至约20重量％的过硫酸盐，约0.01至约2重量％的氟化合物，约1至约10重量％的无机酸 ，约0.5至约5重量％的唑化合物，约0.1至约5重量％的给电子化合物，约0.1至约5重量％的氯化合物，约0.05至约3重量％ 的铜盐，约0.1至约10重量％的有机酸或有机酸盐，以及剩余量的水。
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3.发明申请ETCHANT, METHOD OF MANUFACTURING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE ETCHANT 有权蚀刻剂，使用蚀刻剂制造金属接线和薄膜晶体管基板的方法公开(公告)号：US20150004758A1
公开(公告)日：2015-01-01
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L21/306 , H01L29/66 , C09K13/08
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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公开(公告)号：US09741827B2
公开(公告)日：2017-08-22
申请号：US14508858
申请日：2014-10-07
发明人： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-Il Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： C23F1/18 , H01L29/66 , H01L27/12 , H01L21/3213 , C23F1/02 , C23F1/26 , H01L29/45 , H01L29/49
CPC分类号： H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
摘要： An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
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公开(公告)号：US20150307779A1
公开(公告)日：2015-10-29
申请号：US14508858
申请日：2014-10-07
发明人： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-ll Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： C09K13/08 , H01L29/66 , H01L21/306 , H01L27/12
CPC分类号： H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
摘要： An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
摘要翻译： 提供了包含0.5至20重量％的过硫酸盐的蚀刻剂组合物; 0.01〜2重量％的氟化合物; 1〜10重量％的无机酸; 0.5〜5重量％的含氮（氮原子）的杂环化合物; 0.1至5重量％的氯化物; 0.05〜3重量％的铜盐; 有机酸或0.1〜10重量％的有机酸盐; 电子给体化合物为0.1〜5重量％ 和残留量的溶剂。 还提供了使用该显示装置制造显示装置的方法。
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6.发明授权Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant 有权使用蚀刻剂制造金属布线和薄膜晶体管基板的蚀刻剂组成和方法公开(公告)号：US09293565B2
公开(公告)日：2016-03-22
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L29/66 , C09K13/08 , H01L21/3213 , C23F1/02 , C23F1/18 , C23F1/26 , H01L29/45 , H01L29/49 , H01L27/32
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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7.发明授权Etchant composition and method of forming metal wire and thin film transistor array panel using the same 有权蚀刻剂组成和形成金属线和薄膜晶体管阵列面板的方法使用相同公开(公告)号：US09045833B2
公开(公告)日：2015-06-02
申请号：US13718557
申请日：2012-12-18
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
摘要翻译： 一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％ 无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸，或 其盐，剩余的水。 蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。
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公开(公告)号：US11081645B2
公开(公告)日：2021-08-03
申请号：US16563619
申请日：2019-09-06
发明人： In-Bae Kim , Minho Moon , Youngho Park , Sungsoon Im
摘要： Provided is a mask assembly including a mask sheet including a pattern part with at least one opening part, and a welding part connected to the pattern part, and a mask frame with the mask sheet mounted thereon and welded to the welding part. The mask sheet includes a first surface configured to fact the mask frame and a second surface opposite to the first surface. The welding part includes a hatching area in which a surface roughness of the second surface is larger than that of the second surface in the pattern part.
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公开(公告)号：US09360695B2
公开(公告)日：2016-06-07
申请号：US14046326
申请日：2013-10-04
发明人： Jong-Hyun Choung , Wang Woo Lee , Bong-Kyun Kim , In-Bae Kim , Seon-Il Kim , Young Min Moon , Hong Sick Park , Ki Tae Kim
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1337 , G02F1/1362 , G02F1/1368 , H01L27/12
CPC分类号： G02F1/133345 , G02F1/133707 , G02F1/134363 , G02F1/136259 , G02F1/1368 , G02F2001/134372 , G02F2001/136231 , G02F2001/136295 , G02F2201/124 , H01L27/1225
摘要： A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line.
摘要翻译： 液晶显示器包括：基板; 设置在基板上的栅极线和数据线; 设置在所述基板上的半导体层; 设置在基板上的第一和第二场产生电极; 以及由与第一场产生电极相同的层形成并覆盖数据线的至少一部分的第一保护层。
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10.发明申请ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME 有权使用其制造金属接线和薄膜晶体管基板的蚀刻组合物和方法公开(公告)号：US20150087148A1
公开(公告)日：2015-03-26
申请号：US14263956
申请日：2014-04-28
发明人： In-Bae Kim , Jong-Hyun Choung , Youngmin Moon , Hongsick Park , Gyu-po Kim , Won-guk Seo , Hyun-cheol Shin , Ki-beom Lee , Sam-young Cho , Seung-yeon Han
IPC分类号： H01L21/306 , C23F1/18
CPC分类号： H01L21/30604 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/45
摘要： An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.
摘要翻译： 包含0.5重量％至20重量％的过硫酸盐，0.01重量％至1重量％的氟化合物，1重量％至10重量％的无机酸，0.01重量％至2重量％的唑类， 0.1重量％至5重量％的氯化合物，0.05重量％至3重量％的铜盐，0.01重量％至5重量％的抗氧化剂或其盐，基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量％。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。
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