摘要:
A method of manufacturing silver nanowires includes: forming a first solution including a dispersion stabilizer and a polyol; forming a second solution including a dispersion stabilizer, a silver precursor, a halogen-ion donor, deionized water, and the polyol; forming a third solution by adding the second solution to the first solution; heating the third solution from a first temperature to a second temperature; and forming silver nanowires by maintaining the third solution at the second temperature.
摘要:
A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.
摘要:
An anti-scratch film, including a film base and an anti-scratch layer on one side of the film base. The anti-scratch layer includes a plurality of protrusions.
摘要:
An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first thin film transistor connected to the OLED and including a first channel area extending in a second direction crossing the first direction, and one or more additional thin film transistors connected to the first thin film transistor and including corresponding additional channel areas extending in the second direction.
摘要:
A rollable display device includes a rollable structure including a plurality of unit structures, the rollable structure being rollable and unrollable based on the unit structures, and a display panel structure attached to the rollable structure, wherein respective widths of the unit structures increase in a direction from a first side of the rollable structure to a second side of the rollable structure, the first side of the rollable structure being opposite to the second side of the rollable structure, and wherein each of the unit structures includes a metal plate, the metal plate being bent by a bending limit angle in a direction in which the rollable structure is rolled, and a magnetic object on a side region of the metal plate, the magnetic object being magnetically coupled to an adjacent metal plate.
摘要:
An anti-scratch film, including a film base and an anti-scratch layer on one side of the film base. The anti-scratch layer includes a plurality of protrusions.
摘要:
An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first thin film transistor connected to the OLED and including a first channel area extending in a second direction crossing the first direction, and one or more additional thin film transistors connected to the first thin film transistor and including corresponding additional channel areas extending in the second direction.
摘要:
Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.
摘要:
Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.
摘要:
Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.