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    LOW NOISE AMPLIFIER CIRCUIT WITH MULTIPLE-INPUT MULTIPLE-OUTPUT (MIMO) STRUCTURE
    3.
    发明申请
    LOW NOISE AMPLIFIER CIRCUIT WITH MULTIPLE-INPUT MULTIPLE-OUTPUT (MIMO) STRUCTURE 审中-公开

    公开(公告)号：US20190334488A1

    公开(公告)日：2019-10-31

    申请号：US16166295

    申请日：2018-10-22

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Hyun Hwan YOO ,  Jong Mo LIM ,  Yoo Sam NA ,  Hyun Jin YOO ,  Hyung Jun CHO ,  Yoo Hwan KIM

    IPC: H03F3/195

    Abstract: A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.

    ANTENNA SWITCH CIRCUIT WITH IMPROVED HARMONIC SUPPRESSION CHARACTERISTIC
    4.
    发明申请
    ANTENNA SWITCH CIRCUIT WITH IMPROVED HARMONIC SUPPRESSION CHARACTERISTIC 审中-公开

    公开(公告)号：US20180097511A1

    公开(公告)日：2018-04-05

    申请号：US15691167

    申请日：2017-08-30

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Hyun Jin YOO ,  Yoo Hwan KIM ,  Yoo Sam NA ,  Jong Mo LIM ,  Hyun Hwan YOO

    IPC: H03K5/1252 ,  H03H11/04 ,  H01Q1/50

    CPC classification number: H03K5/1252 ,  H01P1/213 ,  H01Q1/50 ,  H03H11/04 ,  H04B1/0458 ,  H04B1/44

    Abstract: An antenna switch circuit includes: a first switch circuit connected between a first signal port for signal transmission and reception and an antenna port, and operated by a first gate signal; and a second switch circuit connected between a second signal port for signal transmission and reception and the antenna port, and operated by a second gate signal. The first switch circuit and/or the second switch circuit includes a first transistor and a second transistor connected in series between the first and second signal ports, a first voltage dividing circuit including a first resistor and a second resistor connected in series between a source and a drain of the first transistor, and a first variable capacitor circuit connected between the first voltage dividing circuit and a body of the first transistor, and having capacitance varying according to a voltage across opposite ends of the first variable capacitor circuit.

    RF SWITCH
    7.
    发明申请
    RF SWITCH 审中-公开
    射频开关

    公开(公告)号：US20150180465A1

    公开(公告)日：2015-06-25

    申请号：US14268943

    申请日：2014-05-02

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Yoo Sam NA ,  Jong Myeong KIM ,  Hyun Jin YOO ,  Hyun Hwan YOO ,  Yoo Hwan KIM

    IPC: H03K17/16 ,  H03K17/687 ,  H03K17/689 ,  H03K17/605

    CPC classification number: H03K17/162 ,  H03K17/16 ,  H03K17/605 ,  H03K17/6871 ,  H03K17/689

    Abstract: A radio frequency (RF) switch may include: a common port; a first switching unit; and a second switching unit. The first switching unit further includes a third switching device having one end coupled to a body of one of the plurality of first switching devices and the other end coupled to a first ground terminal, and the second switching unit further includes a fourth switching device having one end coupled to a body of one of the plurality of second switching devices and the other end coupled to a second ground terminal.

    Abstract translation: 射频（RF）开关可以包括：公共端口; 第一切换单元; 和第二切换单元。 第一开关单元还包括第三开关装置，其一端耦合到多个第一开关装置中的一个的主体并且另一端耦合到第一接地端子，并且第二开关单元还包括具有一个的第四开关装置 端部耦合到所述多个第二开关装置中的一个的主体，而另一端耦合到第二接地端子。

    DIRECTIONAL COUPLER CIRCUIT AND POWER AMPLIFYING DEVICE WITH PHASE COMPENSATION FUNCTION
    8.
    发明申请
    DIRECTIONAL COUPLER CIRCUIT AND POWER AMPLIFYING DEVICE WITH PHASE COMPENSATION FUNCTION 审中-公开

    公开(公告)号：US20200119424A1

    公开(公告)日：2020-04-16

    申请号：US16421593

    申请日：2019-05-24

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Jong Mo LIM ,  Yoo Sam NA ,  Hyun Hwan YOO ,  Hyun Jin YOO ,  Hyung Jun CHO ,  Yoo Hwan KIM

    IPC: H01P5/18

    Abstract: A directional coupler circuit includes a signal line disposed between a first terminal and a second terminal; a coupling line comprising a first end terminal and a second end terminal, and disposed to be coupled to the signal line; a switching circuit connecting the first end terminal and a coupling port to each other to extract a first coupling signal in a first coupling mode, and connecting the second end terminal and the coupling port to extract a second coupling signal in a second coupling mode; and a phase compensating circuit configured to compensate for a phase difference between the coupling port and a first isolation port in the first coupling mode, or compensate for a phase difference between the coupling port and a second isolation port in the second coupling mode.

    RADIO FREQUENCY SWITCHING DEVICE FOR FAST SWITCHING OPERATION
    9.
    发明申请
    RADIO FREQUENCY SWITCHING DEVICE FOR FAST SWITCHING OPERATION 审中-公开

    公开(公告)号：US20190245574A1

    公开(公告)日：2019-08-08

    申请号：US16237834

    申请日：2019-01-02

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Byeong Hak JO ,  Hyun PAEK ,  Jeong Hoon KIM ,  Yoo Hwan KIM ,  Yoo Sam NA

    IPC: H04B1/40 ,  H03K17/693 ,  H03K17/28 ,  H03K17/687

    CPC classification number: H04B1/40 ,  H03K17/28 ,  H03K17/6874 ,  H03K17/693

    Abstract: A radio frequency switching device includes a switching circuit including first and second transistors; a gate resistor circuit including a first gate resistor and a second gate resistor, the first gate resistor connected to a gate of the first transistor and the second gate resistor connected to a gate of the second transistor; a gate buffer circuit including a first gate buffer and a second gate buffer, the first gate buffer being connected to the first gate resistor to provide a first gate signal to the first transistor through the first gate resistor, the second gate buffer being connected to the second gate resistor to provide a second gate signal to the second transistor through the second gate resistor; and a delay circuit to generate the first gate signal having a first switching time and the second gate signal having a second switching time different than the first switching time.

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