公开(公告)号：US20240234472A1

公开(公告)日：2024-07-11

申请号：US18582945

申请日：2024-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Jin Ju JEON ,  Hee Geun JEONG

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

公开(公告)号：US20140374868A1

公开(公告)日：2014-12-25

申请号：US14307620

申请日：2014-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun LEE ,  Hee Geun JEONG ,  Byung Jun PARK ,  Eun Kyung PARK ,  Jung Chak AHN ,  Duck Hyung LEE ,  Gye Hun CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor includes a plurality of photo detectors and a plurality of trench isolations configured to isolate the photo detectors from each other. Each of the trench isolations includes a plurality of films in a multi-layer structure. A method of manufacturing an image sensor includes forming a plurality of trench isolations to isolate a plurality of photo detectors from each other, forming a first film in each of the trench isolations, and forming a second film that constructs a multi-layer structure together with the first film.

Abstract translation: 图像传感器包括多个光电检测器和多个沟槽隔离件，其被配置为将光电检测器彼此隔离。 每个沟槽隔离件包括多层结构的膜。 制造图像传感器的方法包括形成多个沟槽隔离以将多个光电检测器彼此隔离，在每个沟槽隔离中形成第一膜，并形成构造多层结构的第二膜以及 第一部电影

公开(公告)号：US20210335877A1

公开(公告)日：2021-10-28

申请号：US17138112

申请日：2020-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Jin Ju JEON ,  Hee Geun JEONG

IPC: H01L27/146

Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

公开(公告)号：US20210272999A1

公开(公告)日：2021-09-02

申请号：US17060051

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeong Jae BYEON ,  Byung Jun PARK ,  Jin Pyo KIM

IPC: H01L27/146

Abstract: An image sensor includes a first region and a second region surrounding the first region. A substrate includes a first surface and a second surface that is opposite to the first surface. A photoelectric conversion element is disposed on the substrate. A passivation layer is disposed on the first surface of the substrate. A microlens is disposed on the passivation layer in the first region and is not disposed on the passivation layer in the second region. A pattern structure is disposed on an upper surface of the passivation layer in the second region. The pattern structure includes a metal and has at least one lateral side wall having a sloped profile.

公开(公告)号：US20220020803A1

公开(公告)日：2022-01-20

申请号：US17190796

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Byoung Ho KIM ,  Hee Geun JEONG

IPC: H01L27/146

Abstract: A semiconductor device including: a first substrate including a first surface and a second surface; a first inter-wiring insulating film on the first substrate; a first wiring in the first inter-wiring insulating film; a landing via in the first inter-wiring insulating film, and spaced apart from the first wiring; a second substrate including a third surface and a fourth surface; a second inter-wiring insulating film on the second substrate; a second wiring in the second inter-wiring insulating film; and a through via structure penetrating the second substrate and the second inter-wiring insulating film, and electrically connecting the second wiring to the landing via, wherein with respect to the second surface of the first substrate, a top surface of the landing via is higher than a bottom surface of the first wiring, and a bottom surface of the landing via is lower than the bottom surface of the first wiring.

公开(公告)号：US20220109016A1

公开(公告)日：2022-04-07

申请号：US17405517

申请日：2021-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Hyeon Ho KIM ,  Young Woo CHUNG

IPC: H01L27/146

Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.