公开(公告)号：US20180233506A1

公开(公告)日：2018-08-16

申请号：US15954744

申请日：2018-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Sic YOON ,  Ho-In RYU ,  Ki-Seok LEE ,  Chang-Hyun CHO

IPC: H01L27/108 ,  H01L29/423 ,  H01L21/311 ,  H01L21/761

CPC classification number: H01L27/10876 ,  H01L21/31111 ,  H01L21/761 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10891 ,  H01L29/4236

Abstract: A semiconductor device includes a substrate having an active region defined by a device isolation layer and at least a gate trench linearly extending in a first direction to cross the active region, the active region having a gate area at a bottom of the gate trench and a junction area at a surface of the substrate. The device further may include a first conductive line filling the gate trench and extending in the first direction, the first conductive line having a buried gate structure on the gate area of the active region. The device also may include a junction including implanted dopants at the junction area of the active region, and a junction separator on the device isolation layer and defining the junction. The junction separator may be formed of an insulative material and have an etch resistance greater than that of the device isolation layer.

公开(公告)号：US20140110851A1

公开(公告)日：2014-04-24

申请号：US14045648

申请日：2013-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun-Nam KIM ,  Sun-Young PARK ,  Soo-Ho SHIN ,  Kye-Hee YEOM ,  Hyeon-Woo JANG ,  Jin-Won JEONG ,  Chang-Hyun CHO ,  Hyeong-sun HONG

IPC: H01L23/48

CPC classification number: H01L27/0207 ,  H01L23/48 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers.

Abstract translation: 半导体器件包括与衬底上的有源区相交并沿第一方向延伸的多个位线，形成在相邻位线之间的有源区上的接触焊盘和设置在多个位的侧壁上的多个间隔件 线条。 接触垫的上部插入在相邻间隔件之间，并且接触垫的下部具有大于相邻间隔件之间的距离的宽度。