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1.发明公开公开(公告)号：US20240161842A1
公开(公告)日：2024-05-16
申请号：US18338857
申请日：2023-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonam KIM , Sejun PARK , Kangin SHIN , Changhwan SHIN , Hyeji LEE , Woojae JANG
CPC classification number: G11C16/3459 , G11C16/102
Abstract: Provided is a memory device with improved threshold voltage distribution and an operating method of the memory device. The memory device includes a memory cell array including a plurality of memory cells, a voltage generator configured to generate a program voltage and a verification voltage applied to the plurality of memory cells during a data write operation, and a control logic configured to control multiple program loops to program the memory cells to multiple program states during the data write operation and configured to determine whether programming passes or fails in the multiple program loops, wherein the control logic controls the program loops to verify one or more (n+1)-th memory cells to be programmed to an (n+1)-th program state by using a verify condition for verifying an n-th program state in at least one of the multiple program loops (n is an integer greater than or equal to 1).
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公开(公告)号：US20230307062A1
公开(公告)日：2023-09-28
申请号：US18326606
申请日：2023-05-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soyeong GWAK , Raeyoung LEE , Jinkyu KANG , Sejun PARK , Changhwan SHIN , Jaeduk LEE , Woojae JANG
CPC classification number: G11C16/16 , G11C16/26 , G11C16/349 , G11C7/1087 , G11C16/24 , G11C7/106 , G11C16/08
Abstract: An operating method of a storage device includes reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device; selecting an operation mode corresponding to the read wear-out pattern using the controller; and transmitting the selected operation mode to the non-volatile memory device using the controller.
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