公开(公告)号：US20190129655A1

公开(公告)日：2019-05-02

申请号：US16023706

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Raeyoung LEE ,  Hyunjung KIM ,  Sung-Bok LEE ,  Soyeong GWAK ,  Sang-wan NAM

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/34 ,  G11C16/14 ,  G11C16/10 ,  G06F11/10 ,  G11C29/52

Abstract: A method of operating a memory controller, the memory controller configured to control a nonvolatile memory device, the nonvolatile memory device including a plurality of memory blocks. The method including detecting an invalid block among the plurality of memory blocks; determining an invalid pattern based on a state of the invalid block; and performing an operation on the invalid block such that the invalid block has the invalid pattern.

公开(公告)号：US20230307062A1

公开(公告)日：2023-09-28

申请号：US18326606

申请日：2023-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyeong GWAK ,  Raeyoung LEE ,  Jinkyu KANG ,  Sejun PARK ,  Changhwan SHIN ,  Jaeduk LEE ,  Woojae JANG

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G11C7/10 ,  G11C16/24 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/26 ,  G11C16/349 ,  G11C7/1087 ,  G11C16/24 ,  G11C7/106 ,  G11C16/08

Abstract: An operating method of a storage device includes reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device; selecting an operation mode corresponding to the read wear-out pattern using the controller; and transmitting the selected operation mode to the non-volatile memory device using the controller.