IMAGE SENSOR AND A METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230064084A1

    公开(公告)日:2023-03-02

    申请号:US17866805

    申请日:2022-07-18

    Abstract: An image sensor including: a semiconductor substrate including a plurality of pixel regions; an anti-reflection layer on the semiconductor substrate; color filters provided on the anti-reflection layer and in the pixel regions; and a fence structure disposed between adjacent ones of the color filters, wherein the fence structure includes: a lower portion penetrating the anti-reflection layer; an upper portion on the anti-reflection layer; and an intermediate portion between the lower portion and the upper portion, wherein the fence structure has undercut regions, which are provided at both sides of the intermediate portion and are between the upper portion of the fence structure and a top surface of the anti-reflection layer.

    Structure for detecting temperature of electronic device

    公开(公告)号:US11585704B2

    公开(公告)日:2023-02-21

    申请号:US17206783

    申请日:2021-03-19

    Abstract: An electronic device is provided. The electronic device includes a housing configured to form an external shape thereof, a first board disposed in a first direction that is away from the housing, wherein at least one processor is mounted at the first board, a second board disposed between the housing and the first board and electrically connected with the first board, and a thermistor mounted on the second board, wherein the at least one processor measures a temperature of the housing based on an electrical signal received from the second board.

    Structure for detecting temperature of electronic device

    公开(公告)号:US10955298B2

    公开(公告)日:2021-03-23

    申请号:US16786100

    申请日:2020-02-10

    Abstract: An electronic device is provided. The electronic device includes a housing configured to form an external shape thereof, a first board disposed in a first direction that is away from the housing, wherein at least one processor is mounted at the first board, a second board disposed between the housing and the first board and electrically connected with the first board, and a thermistor mounted on the second board, wherein the at least one processor measures a temperature of the housing based on an electrical signal received from the second board.

    Structure for detecting temperature of electronic device

    公开(公告)号:US10557757B2

    公开(公告)日:2020-02-11

    申请号:US16038746

    申请日:2018-07-18

    Abstract: An electronic device is provided. The electronic device includes a housing configured to form an external shape thereof, a first board disposed in a first direction that is away from the housing, wherein at least one processor is mounted at the first board, a second board disposed between the housing and the first board and electrically connected with the first board, and a thermistor mounted on the second board, wherein the at least one processor measures a temperature of the housing based on an electrical signal received from the second board.

    Hetero junction field effect transistor and method for manufacturing the same
    7.
    发明授权
    Hetero junction field effect transistor and method for manufacturing the same 有权
    异质结场效应晶体管及其制造方法

    公开(公告)号:US09306049B2

    公开(公告)日:2016-04-05

    申请号:US14062284

    申请日:2013-10-24

    Abstract: Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.

    Abstract translation: 公开了异质结场效应晶体管和制造这种晶体管的方法,其中:第一化合物半导体层设置在基板上; 在第一化合物半导体层上设置第二化合物半导体层; 在第二化合物半导体层上设置栅极绝缘层; 并且栅极电极设置在栅极绝缘层上,使得栅极绝缘层穿透第二化合物半导体层以与第一化合物半导体层接触。

    Electronic device
    8.
    发明授权

    公开(公告)号:US11940840B2

    公开(公告)日:2024-03-26

    申请号:US17492709

    申请日:2021-10-04

    Abstract: Various embodiments relate to an electronic device. The electronic device may include: a housing including a first surface facing a first direction and a second surface facing a second direction opposite the first direction; a first display viewable through the first surface; a battery disposed between the first display and the second surface; a second display having a size smaller than a size of the first display and viewable through a partial area of the second surface; a short-distance wireless communication antenna disposed at a lower end of the second display and configured to transmit/receive a short-distance wireless communication signal through the partial area of the second surface and the second display; and a shield disposed at a lower end of the short-distance wireless communication antenna and configured to block transmission/reception of the short-distance wireless communication signal through the first surface.

    HETERO JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    HETERO JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    异位连接场效应晶体管及其制造方法

    公开(公告)号:US20140138747A1

    公开(公告)日:2014-05-22

    申请号:US14062284

    申请日:2013-10-24

    Abstract: Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.

    Abstract translation: 公开了异质结场效应晶体管和制造这种晶体管的方法,其中:第一化合物半导体层设置在基板上; 在第一化合物半导体层上设置第二化合物半导体层; 在第二化合物半导体层上设置栅极绝缘层; 并且栅极电极设置在栅极绝缘层上,使得栅极绝缘层穿透第二化合物半导体层以与第一化合物半导体层接触。

    Electronic device
    10.
    发明授权

    公开(公告)号:US11137798B2

    公开(公告)日:2021-10-05

    申请号:US16800157

    申请日:2020-02-25

    Abstract: Various embodiments relate to an electronic device. The electronic device may include: a housing including a first surface facing a first direction and a second surface facing a second direction opposite the first direction; a first display viewable through the first surface; a battery disposed between the first display and the second surface; a second display having a size smaller than a size of the first display and viewable through a partial area of the second surface; a short-distance wireless communication antenna disposed at a lower end of the second display and configured to transmit/receive a short-distance wireless communication signal through the partial area of the second surface and the second display; and a shield disposed at a lower end of the short-distance wireless communication antenna and configured to block transmission/reception of the short-distance wireless communication signal through the first surface.

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