公开(公告)号：US20140095556A1

公开(公告)日：2014-04-03

申请号：US14038938

申请日：2013-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Man LEE ,  Cjul LEE ,  Chul LEE ,  Joo-Young HWANG

IPC: G06F17/30

CPC classification number: G06F17/30091

Abstract: A computing system includes a storage device in which file data is stored through data blocks and metadata is stored through a node block, and a file system configured to manage the file data and the metadata stored in the storage device. The node block includes data pointers respectively pointing to the data blocks, and one or more extents each indicative of data block groups which include data blocks having continuous physical addresses among the data blocks

Abstract translation: 计算系统包括：存储装置，其中通过数据块存储文件数据，并且通过节点块存储元数据;以及文件系统，被配置为管理存储在存储装置中的文件数据和元数据。 节点块包括分别指向数据块的数据指针，以及每个指示数据块组的一个或多个扩展区，其包括在数据块中具有连续物理地址的数据块

公开(公告)号：US20200097367A1

公开(公告)日：2020-03-26

申请号：US16529320

申请日：2019-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokhwan KIM ,  Yonggil SONG ,  Chul LEE ,  Jooyoung HWANG

IPC: G06F11/14 ,  G06F3/06 ,  G11C14/00

Abstract: A storage device includes a nonvolatile memory device, a random access memory that includes a first region and a second region, and a controller that is configured to use the first region of the random access memory as a journal memory for a journal indicating modification of data of the second region, expose a user region of the nonvolatile memory device to an external host device as a first access region of a block unit, and expose the second region of the random access memory to the external host device as both a second access region of the block unit and a third access region of a byte unit.

公开(公告)号：US20170147209A1

公开(公告)日：2017-05-25

申请号：US15291094

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Yong Lee ,  Shin Wook GAHNG ,  Chul LEE

IPC: G06F3/06 ,  G11C29/52 ,  G06F11/10

Abstract: A storage device may include a plurality of memory cells arranged in pages and blocks, each page including a row of memory cells, and each block including a plurality of pages of memory cells. The storage device may include a memory device, such as a nonvolatile memory device, which includes these items. A data recovery method for the storage device may include receiving by the storage device a first command corresponding to a first selected data recovery scheme. Based on the first command: a first target page scheme for performing error detection on the plurality of blocks is applied, target pages are read using the first target page scheme, and an amount of errors in each read target page is detected. In addition, it may be determined that a target page of a first block has at least a first threshold amount of errors, and based on the determination, data recovery for the first block may be performed by relocating all data stored in the first block to another block. Further, it may be determined that no read page in a second block has at least the first threshold amount of errors, and as a result, the data stored in the second block can be maintained.

公开(公告)号：US20130208537A1

公开(公告)日：2013-08-15

申请号：US13762737

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yang-Woo ROH ,  Chul LEE ,  Sang-Hoan CHANG ,  Jae-Soo LEE ,  Joo-Young HWANG

IPC: G11C13/00

CPC classification number: G11C13/0004 ,  G11C7/14 ,  G11C13/004 ,  G11C13/0061 ,  G11C2013/0078 ,  G11C2213/72

Abstract: A memory device may include a normal cell which is configured to be programmed to a first resistance and stabilized as a resistance of the normal cell drifts from the first resistance to a second resistance; a flag cell which is configured to be programmed to a third resistance smaller than the first resistance and stabilized as a resistance of the flag cell drifts from the third resistance to a fourth resistance smaller than the second resistance; and a decision circuit which is configured to decide whether the flag cell has been stabilized in order to determine whether the normal cell has been stabilized.

Abstract translation: 存储器件可以包括正常单元，其被配置为被编程为第一电阻并且随着正常单元的电阻从第一电阻漂移到第二电阻而稳定; 被配置为被编程为小于所述第一电阻的第三电阻并且随着所述标志单元的电阻从所述第三电阻漂移到小于所述第二电阻的第四电阻而稳定的标志单元; 以及判定电路，其被配置为判定标志单元是否已经稳定以便确定正常单元是否已经稳定。