公开(公告)号：US20240355637A1

公开(公告)日：2024-10-24

申请号：US18476390

申请日：2023-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： John Soo Kim ,  Gwan Ho Kim ,  Ji Yoon Kim ,  Heung Sik Park ,  Keun Hee Bai ,  Jong Min Baek ,  Do Haing Lee ,  Jong Sun Lee

IPC: H01L21/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L21/32 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/76831

Abstract: A for fabricating a semiconductor device comprises forming a mask layer on a substrate, the mask layer defining a through hole that exposes an upper surface of the substrate, the mask layer comprising a first mask layer and a second mask layer, wherein the second mask layer is between the substrate and the first mask layer, and wherein the second mask layer comprises carbon. The method includes forming a liner layer on side walls of the through hole inside the second mask layer.

公开(公告)号：US20220109055A1

公开(公告)日：2022-04-07

申请号：US17318079

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Hyuk Lee ,  Jong Chul Park ,  Sang Duk Park ,  Hong Sik Shin ,  Do Haing Lee

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

公开(公告)号：US20240072140A1

公开(公告)日：2024-02-29

申请号：US18502324

申请日：2023-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Hyuk Lee ,  Jong Chul Park ,  Sang Duk Park ,  Hong Sik Shin ,  Do Haing Lee

IPC: H01L29/417 ,  H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

公开(公告)号：US11848364B2

公开(公告)日：2023-12-19

申请号：US17318079

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Hyuk Lee ,  Jong Chul Park ,  Sang Duk Park ,  Hong Sik Shin ,  Do Haing Lee

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L23/522 ,  H01L23/485 ,  H01L23/528

CPC classification number: H01L29/41791 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.