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公开(公告)号：US20130214312A1
公开(公告)日：2013-08-22
申请号：US13769132
申请日：2013-02-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong Rak Sohn , Dong Kyun Yim , Seul Gee Lee , Chul Soo Yoon
IPC: H01L33/50
CPC classification number: H01L33/50 , H01L33/507 , H01L2933/0041
Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.
Abstract translation: 一种制造半导体发光器件的方法，包括在半导体发光元件的表面上形成导电膜。 通过将荧光体颗粒与溶解有金属盐的电解质混合来加入荧光体颗粒。 将其上形成有导电膜的半导体发光元件浸入具有带电荧光体颗粒的电解质中。 通过电泳荧光体颗粒来形成导电膜上的荧光体层。 使用湿蚀刻去除导电膜。
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公开(公告)号：US08852972B2
公开(公告)日：2014-10-07
申请号：US13769132
申请日：2013-02-15
Applicant: Samsung Electronics CO., Ltd.
Inventor： Jong Rak Sohn , Dong Kyun Yim , Seul Gee Lee , Chul Soo Yoon
CPC classification number: H01L33/50 , H01L33/507 , H01L2933/0041
Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.
Abstract translation: 一种制造半导体发光器件的方法，包括在半导体发光元件的表面上形成导电膜。 通过将荧光体颗粒与溶解有金属盐的电解质混合来加入荧光体颗粒。 将其上形成有导电膜的半导体发光元件浸入具有带电荧光体颗粒的电解质中。 通过电泳荧光体颗粒来形成导电膜上的荧光体层。 使用湿蚀刻去除导电膜。
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公开(公告)号：US11482653B2
公开(公告)日：2022-10-25
申请号：US16264043
申请日：2019-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Kuk Lee , Dae Young Lee , Moon Sub Kim , Sung Jin Ahn , Seung Hwan Lee , Dong Kyun Yim , Woo Seok Jang
Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.
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