SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20130214312A1

    公开(公告)日:2013-08-22

    申请号:US13769132

    申请日:2013-02-15

    CPC classification number: H01L33/50 H01L33/507 H01L2933/0041

    Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.

    Abstract translation: 一种制造半导体发光器件的方法,包括在半导体发光元件的表面上形成导电膜。 通过将荧光体颗粒与溶解有金属盐的电解质混合来加入荧光体颗粒。 将其上形成有导电膜的半导体发光元件浸入具有带电荧光体颗粒的电解质中。 通过电泳荧光体颗粒来形成导电膜上的荧光体层。 使用湿蚀刻去除导电膜。

    LIGHT EMITTING DEVICE PACKAGES AND METHODS OF FORMING THE SAME
    2.
    发明申请
    LIGHT EMITTING DEVICE PACKAGES AND METHODS OF FORMING THE SAME 有权
    发光装置包及其形成方法

    公开(公告)号:US20140246648A1

    公开(公告)日:2014-09-04

    申请号:US14186540

    申请日:2014-02-21

    CPC classification number: H01L33/382 H01L33/62 H01L2224/13

    Abstract: A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes.

    Abstract translation: 发光器件封装,包括具有彼此绝缘的第一和第二电极的发光结构; 和支撑结构。 支撑结构包括:电连接到发光结构的第一电极的第一支撑电极; 电连接到所述发光结构的第二电极的第二支撑电极,所述第二支撑电极与所述第一支撑电极间隔开并与所述第一支撑电极电绝缘; 以及第一支撑电极和第二支撑电极之间的支撑连接部分。 发光结构包括突出部分,该突出部分在水平方向上突出超过第一支撑电极和第二支撑电极中的至少一个的侧壁,使得在突出部分的下方和从底部的底部延伸的平面之下存在空隙 第一和第二支撑电极。

    Light emitting device packages and methods of forming the same

    公开(公告)号:US09705041B2

    公开(公告)日:2017-07-11

    申请号:US14186540

    申请日:2014-02-21

    CPC classification number: H01L33/382 H01L33/62 H01L2224/13

    Abstract: A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes.

    Semiconductor light emitting device and method of manufacturing the same
    7.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08852972B2

    公开(公告)日:2014-10-07

    申请号:US13769132

    申请日:2013-02-15

    CPC classification number: H01L33/50 H01L33/507 H01L2933/0041

    Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.

    Abstract translation: 一种制造半导体发光器件的方法,包括在半导体发光元件的表面上形成导电膜。 通过将荧光体颗粒与溶解有金属盐的电解质混合来加入荧光体颗粒。 将其上形成有导电膜的半导体发光元件浸入具有带电荧光体颗粒的电解质中。 通过电泳荧光体颗粒来形成导电膜上的荧光体层。 使用湿蚀刻去除导电膜。

Patent Agency Ranking