公开(公告)号：US20140209956A1

公开(公告)日：2014-07-31

申请号：US14152128

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myong Soo CHO ,  Tae Hun KIM ,  Young Ho RYU ,  Young Chul SHIN ,  Dong Myung SHIN

IPC: H01L33/36

CPC classification number: H01L33/382

Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.

Abstract translation: 在一个示例性实施例中，半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极，第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。

公开(公告)号：US20140367730A1

公开(公告)日：2014-12-18

申请号：US14261124

申请日：2014-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Sung KIM ,  Yong Min KIM ,  Dong Myung SHIN ,  Soo Jin JUNG

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion. The second electrode unit includes a second electrode pad and a second electrode finger extending from the second electrode pad, and has an annular shape with an open portion. One of the first and second electrode units substantially surrounds the other, and the center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure.

Abstract translation: 半导体发光器件包括发光结构，第一电极单元和第二电极单元。 发光结构包括第一和第二导电类型半导体层，有源层。 第一电极单元包括从第一电极焊盘延伸的第一电极焊盘和第一电极指，并且具有开口部分的环形形状。 第二电极单元包括从第二电极焊盘延伸的第二电极焊盘和第二电极指，并且具有开口部分的环形形状。 第一和第二电极单元中的一个基本上围绕另一个，并且第一和第二电极单元中的至少一个的环形形状的中心与发光结构的上表面的中心间隔开。