公开(公告)号：US20140203317A1

公开(公告)日：2014-07-24

申请号：US14156636

申请日：2014-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Chul SHIN ,  Myong Soo CHO

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/387 ,  H01L33/507

Abstract: There is provided a semiconductor light emitting device including a substrate having light transmission properties and including a first surface and a second surface opposed to the first surface, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially disposed on the first surface of the substrate, a first electrode and a second electrode connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, and a window layer disposed on the second surface of the substrate, the window layer being formed of a light transmissive material which is different from a material of the substrate and including inclined side surfaces.

Abstract translation: 提供了一种半导体发光器件，其包括具有透光性的衬底，并且包括与第一表面相对的第一表面和第二表面，包括第一导电类型半导体层，有源层和第二导电性的发光结构 分别依次设置在基板的第一表面上的第一电极和第二电极以及分别连接到第一导电类型半导体层和第二导电类型半导体层的第一电极和第二电极以及设置在基板的第二表面上的窗口层 所述窗口层由与所述基板的材料不同并且包括倾斜侧表面的透光材料形成。

公开(公告)号：US20230178511A1

公开(公告)日：2023-06-08

申请号：US17975054

申请日：2022-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Chul SHIN ,  MinWoo RHEE ,  Su Min KIM ,  Il Young HAN ,  Nung Pyo HONG ,  Seung Don LEE ,  Kyeong Bin LIM

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/80 ,  H01L25/0657 ,  H01L25/0652 ,  H01L24/05 ,  H01L24/08 ,  H01L24/74 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1436 ,  H01L2924/1431 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/73204 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/08145 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05172 ,  H01L2224/05005 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/80224 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80098 ,  H01L2225/06527 ,  H01L2225/06541

Abstract: A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.

公开(公告)号：US20140061713A1

公开(公告)日：2014-03-06

申请号：US14075519

申请日：2013-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yung Ho RYU ,  Hae Yeon HWANG ,  Young Chul SHIN

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract translation: 一种半导体发光器件包括：包括第一和第二区域的第一导电半导体层; 设置在所述第二区域上的有源层; 设置在所述有源层上的第二导电半导体层; 分别设置在第一和第二导电半导体层上的第一和第二电极分支; 电连接到所述第一电极分支并设置在所述第一电极分支上的第一电极焊盘; 以及电连接到第二电极分支并设置在第二电极分支上的第二电极焊盘。

公开(公告)号：US20140209956A1

公开(公告)日：2014-07-31

申请号：US14152128

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myong Soo CHO ,  Tae Hun KIM ,  Young Ho RYU ,  Young Chul SHIN ,  Dong Myung SHIN

IPC: H01L33/36

CPC classification number: H01L33/382

Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.

Abstract translation: 在一个示例性实施例中，半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极，第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。

公开(公告)号：US20140219304A1

公开(公告)日：2014-08-07

申请号：US14154556

申请日：2014-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Ho LEE ,  Chan Mook LIM ,  Young Chul SHIN ,  Su Hyun JO

IPC: H01L33/62 ,  H01S5/02

CPC classification number: H01S5/02 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44

Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

Abstract translation: 半导体发光器件包括导电衬底，层叠在导电衬底上的第二导电型半导体层，有源层和第一导电型半导体层的发光层叠体，与第一导电型电连接的第一电极层 半导体层，在导电基板和第二导电类型半导体层之间的第二电极层，第二电极层电连接到第二导电类型半导体层，以及在有源层和第二电极层之间的钝化层，钝化层 层覆盖发光层压板的有源层的至少一个侧表面。

公开(公告)号：US20130168718A1

公开(公告)日：2013-07-04

申请号：US13731472

申请日：2012-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Chul SHIN ,  Hyung Duk KO

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L2224/48463 ,  H01L2224/49107

Abstract: A semiconductor light emitting device includes a semiconductor laminate including first and second conductivity-type semiconductor layers and an active layer formed therebetween, and divided into first and second regions. At least one contact hole is formed on the first region and connected to a portion of the first conductivity-type semiconductor layer through the active layer. A first electrode is formed to be connected to the first conductivity-type semiconductor layer of the first region and connected to the second conductivity-type semiconductor layer of the second region through the at least one contact hole. A second electrode is formed and connected to the second conductivity-type semiconductor layer of the first region. First and second electrode pads and a support substrate are formed.

Abstract translation: 半导体发光器件包括半导体层叠体，其包括第一和第二导电型半导体层以及在它们之间形成的有源层，并且被分成第一和第二区域。 在第一区域上形成至少一个接触孔，并通过有源层与第一导电型半导体层的一部分连接。 第一电极被形成为连接到第一区域的第一导电类型半导体层，并且通过至少一个接触孔连接到第二区域的第二导电类型半导体层。 第二电极形成并连接到第一区域的第二导电类型半导体层。 形成第一和第二电极焊盘和支撑衬底。