公开(公告)号：US20140367730A1

公开(公告)日：2014-12-18

申请号：US14261124

申请日：2014-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Sung KIM ,  Yong Min KIM ,  Dong Myung SHIN ,  Soo Jin JUNG

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion. The second electrode unit includes a second electrode pad and a second electrode finger extending from the second electrode pad, and has an annular shape with an open portion. One of the first and second electrode units substantially surrounds the other, and the center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure.

Abstract translation: 半导体发光器件包括发光结构，第一电极单元和第二电极单元。 发光结构包括第一和第二导电类型半导体层，有源层。 第一电极单元包括从第一电极焊盘延伸的第一电极焊盘和第一电极指，并且具有开口部分的环形形状。 第二电极单元包括从第二电极焊盘延伸的第二电极焊盘和第二电极指，并且具有开口部分的环形形状。 第一和第二电极单元中的一个基本上围绕另一个，并且第一和第二电极单元中的至少一个的环形形状的中心与发光结构的上表面的中心间隔开。

公开(公告)号：US20150280062A1

公开(公告)日：2015-10-01

申请号：US14605551

申请日：2015-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Kyung Wook HWANG ,  Yong Min KIM ,  Sung Hyun SIM

IPC: H01L33/18 ,  H01L33/14 ,  H01L33/00 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44 ,  H01L33/52 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。