公开(公告)号：US20160133788A1

公开(公告)日：2016-05-12

申请号：US14789278

申请日：2015-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun KIM ,  Myong Soo CHO ,  Yeon Ji KIM ,  Yong Seok KIM ,  Tae Kang KIM ,  Jae Ho HAN

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/54 ,  H01L33/50 ,  H01L33/46 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54

Abstract: Semiconductor light-emitting devices, and semiconductor light-emitting packages, include at least one light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a substrate, the at least one light-emitting structure having a first region and a second region delimiting the first region. The light-emitting device includes a groove in the second region, and the groove is adjacent to an edge of the substrate and extends parallel to the edge of the substrate.

Abstract translation: 半导体发光器件和半导体发光封装包括至少一个发光结构，其包括依次堆叠在衬底上的第一导电类型半导体层，有源层和第二导电类型半导体层， 至少一个发光结构具有第一区域和限定第一区域的第二区域。 发光装置包括在第二区域中的凹槽，并且凹槽与衬底的边缘相邻并且平行于衬底的边缘延伸。

公开(公告)号：US20160056118A1

公开(公告)日：2016-02-25

申请号：US14693749

申请日：2015-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Yong Il KIM ,  Myong Soo CHO

IPC: H01L23/00 ,  H01L33/62

CPC classification number: H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2224/1607 ,  H01L2224/16106 ,  H01L2224/16258 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014

Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.

Abstract translation: 半导体发光器件包括多区域焊盘。 半导体发光器件包括具有第一表面和第二表面的发光二极管（LED）芯片，第一表面设置有第一和第二电极以及与第一表面相对的第二表面。 钝化层设置在LED芯片的表面上，使得第一和第二电极的接合区域通过钝化层露出。 在每个相应的接合区域中设置有焊盘，并且具有多个分离的区域。 焊料凸块设置在每个相应的接合区域中并且覆盖相应焊垫的多个分离区域。 在半导体发光器件中，通过确保焊盘和焊料凸块之间的界面不被完全损坏，从而可以有效地防止焊盘和焊料凸点之间的分离。

公开(公告)号：US20150171298A1

公开(公告)日：2015-06-18

申请号：US14543481

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myong Soo CHO ,  Yong-Il KIM ,  Jin Ha KIM ,  Kwang Min SONG ,  Sang Seok LEE

IPC: H01L33/62 ,  H01L33/40 ,  H01L33/44 ,  H01L33/20

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2933/0091

Abstract: In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.

Abstract translation: 在示例性实施例中，半导体发光器件包括发光结构，第一和第二绝缘层，阻挡金属层和电极。 发光结构包括在第一和第二导电类型半导体层之间的有源层。 第一绝缘层位于发光结构上并且限定分别暴露第一和第二导电类型半导体层的第一开口和第二开口中的第一绝缘层。 阻挡金属层位于第一绝缘层上，并通过第一和第二开口与第一和第二导电型半导体层电连接。 第二绝缘层位于阻挡金属层上并且限定了部分地暴露阻挡金属层的第二开口。 电极在阻挡金属层上，并通过阻挡金属层与第一和第二导电型半导体层电连接。

公开(公告)号：US20140203317A1

公开(公告)日：2014-07-24

申请号：US14156636

申请日：2014-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Chul SHIN ,  Myong Soo CHO

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/387 ,  H01L33/507

Abstract: There is provided a semiconductor light emitting device including a substrate having light transmission properties and including a first surface and a second surface opposed to the first surface, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially disposed on the first surface of the substrate, a first electrode and a second electrode connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, and a window layer disposed on the second surface of the substrate, the window layer being formed of a light transmissive material which is different from a material of the substrate and including inclined side surfaces.

Abstract translation: 提供了一种半导体发光器件，其包括具有透光性的衬底，并且包括与第一表面相对的第一表面和第二表面，包括第一导电类型半导体层，有源层和第二导电性的发光结构 分别依次设置在基板的第一表面上的第一电极和第二电极以及分别连接到第一导电类型半导体层和第二导电类型半导体层的第一电极和第二电极以及设置在基板的第二表面上的窗口层 所述窗口层由与所述基板的材料不同并且包括倾斜侧表面的透光材料形成。

公开(公告)号：US20140273318A1

公开(公告)日：2014-09-18

申请号：US14207466

申请日：2014-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yung Ho RYU ,  Jong Hoon LIM ,  Sung Joon KIM ,  Tae Hun KIM ,  Gyeong Seon PARK ,  Myong Soo CHO

IPC: H01L33/00 ,  B23K1/00

CPC classification number: B23K1/0006 ,  B23K1/0016 ,  B23K35/0238 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/262 ,  B23K35/264 ,  B23K35/268 ,  B23K35/282 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/3046 ,  B23K35/32 ,  B23K35/322 ,  B23K2101/40 ,  B23K2101/42 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of forming a metal bonding layer includes forming a first bonding metal layer and a second bonding metal layer on surfaces of first and second bonding target objects, respectively. The second bonding target object is disposed on the first bonding target object to allow the first and second bonding metal layers to face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first and second bonding metal layers includes a reaction delaying layer formed of a metal for delaying the reaction between the first and second bonding metal layers.

Abstract translation: 形成金属接合层的方法包括分别在第一和第二接合目标物体的表面上形成第一接合金属层和第二接合金属层。 第二接合目标物体设置在第一接合目标物体上，以允许第一和第二接合金属层彼此面对。 通过第一和第二接合金属层之间的反应形成共晶金属结合层。 第一和第二接合金属层中的至少一个包括由金属形成的反应延迟层，用于延迟第一和第二接合金属层之间的反应。

公开(公告)号：US20160365497A1

公开(公告)日：2016-12-15

申请号：US15139930

申请日：2016-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun KIM ,  Myong Soo CHO ,  Jung Hee KWAK ,  Yeon Ji KIM ,  Yong Seok KIM ,  Tae Kang KIM

IPC: H01L33/62 ,  H01L33/46 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L24/00 ,  H01L25/0753 ,  H01L33/38

Abstract: A light emitting device package includes: a package board including a first electrode structure and a second electrode structure; and a light emitting device mounted on the package board and configured to emit light, the light emitting device including: light emitting structures provided on a growth substrate, electrically connected in series, and including an input terminal and an output terminal; a first solder pad and a second solder pad electrically connected to the input terminal and the output terminal, respectively, and in contact with the first and second electrode structures; and dummy solder pads provided on the light emitting structures and electrically insulated from the light emitting structures.

Abstract translation: 发光器件封装包括：包括第一电极结构和第二电极结构的封装板; 以及安装在所述封装板上并被配置为发光的发光器件，所述发光器件包括：设置在生长衬底上的发光结构，其串联电连接，并且包括输入端子和输出端子; 分别与输入端子和输出端子电连接并与第一和第二电极结构接触的第一焊盘和第二焊盘; 以及设置在发光结构上并与发光结构电绝缘的虚拟焊盘。

公开(公告)号：US20140209956A1

公开(公告)日：2014-07-31

申请号：US14152128

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myong Soo CHO ,  Tae Hun KIM ,  Young Ho RYU ,  Young Chul SHIN ,  Dong Myung SHIN

IPC: H01L33/36

CPC classification number: H01L33/382

Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.

Abstract translation: 在一个示例性实施例中，半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极，第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。

公开(公告)号：US20140097458A1

公开(公告)日：2014-04-10

申请号：US14101242

申请日：2013-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae . CHOI ,  Jin Hyun LEE ,  Ki Yeol PARK ,  Myong Soo CHO

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。