公开(公告)号：US20160027896A1

公开(公告)日：2016-01-28

申请号：US14669221

申请日：2015-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Su LEE ,  Young-Wook PARK ,  Hee-Sook PARK ,  Dong-Bok LEE ,  Jong-Myeong LEE

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/288 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/31111 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/288 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76895 ,  H01L27/10855 ,  H01L29/4236 ,  H01L29/78

Abstract: Semiconductor devices, and methods for fabricating a semiconductor device, include forming a contact hole penetrating an interlayer insulating layer and exposing a conductor defining a bottom surface of the contact hole, forming a sacrificial layer filling the contact hole, forming a first trench overlapping a part of the contact hole by removing at least a part of the sacrificial layer, forming a spacer filling the first trench, forming a second trench by removing a remainder of the sacrificial layer, and forming a metal electrode filling the contact hole and the second trench using electroless plating.

Abstract translation: 半导体器件以及半导体器件的制造方法包括：形成贯穿层间绝缘层的接触孔，露出限定接触孔的底面的导体，形成填充接触孔的牺牲层，形成与第一沟槽重叠的部分 通过去除所述牺牲层的至少一部分，形成填充所述第一沟槽的间隔物，通过去除所述牺牲层的剩余部分形成第二沟槽，以及使用以下方式形成填充所述接触孔和所述第二沟槽的金属电极： 无电镀。

公开(公告)号：US20140183435A1

公开(公告)日：2014-07-03

申请号：US14096055

申请日：2013-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sea-Phyo KIM ,  Dong-Bok LEE ,  Chan-Min LEE

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144

Abstract: A semiconductor device includes a conductive line, a diode on the conductive line, one or more insulating patterns adjacent to diode, and a data storage region coupled to the diode. An upper surface of the diode is between the one or more insulating patterns and the data storage region. The data storage region may include a phase-change region, and the diode may taper in width between two insulating patterns in one arrangement.

Abstract translation: 半导体器件包括导线，导线上的二极管，与二极管相邻的一个或多个绝缘图案，以及耦合到二极管的数据存储区域。 二极管的上表面位于一个或多个绝缘图案和数据存储区域之间。 数据存储区域可以包括相变区域，并且二极管可以在一个布置中在两个绝缘图案之间的宽度上逐渐变细。