公开(公告)号：US11137673B1

公开(公告)日：2021-10-05

申请号：US16952844

申请日：2020-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US11526087B2

公开(公告)日：2022-12-13

申请号：US17401611

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Doogyu Lee ,  Seungyoon Lee

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.

公开(公告)号：US20220214624A1

公开(公告)日：2022-07-07

申请号：US17401611

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Doogyu Lee ,  Seungyoon Lee

IPC: G03F7/20 ,  H01L21/027 ,  G03F9/00

Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.

公开(公告)号：US11796923B2

公开(公告)日：2023-10-24

申请号：US17392788

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjay Kang ,  Chorong Park ,  Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee

IPC: G03F7/20 ,  G03F7/00 ,  G03F1/70

CPC classification number: G03F7/70633 ,  G03F7/2004 ,  G03F1/70

Abstract: Disclosed are an overlay correction method, a method of evaluating an overlay correction operation, and a method of fabricating a semiconductor device using the overlay correction method. The overlay correction method may include measuring an overlay between center lines of lower and upper patterns on a wafer, fitting each of components of the overlay with a polynomial function to obtain first fitting quantities, and summing the first fitting quantities to construct a correction model. The components of the overlay may include overlay components, which are respectively measured in two different directions parallel to a top surface of a reticle. The highest order of the polynomial function may be determined as an order, which minimizes a difference between the polynomial function and each of the components of the overlay or corresponds to an inflection point in a graph of the difference with respect to the highest order of the polynomial function.

公开(公告)号：US11422455B2

公开(公告)日：2022-08-23

申请号：US17464826

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F1/24 ,  H01L21/027 ,  G03F7/20

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.