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公开(公告)号：US20240134290A1
公开(公告)日：2024-04-25
申请号：US18332238
申请日：2023-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inbeom Yim , Junseong Yoon , Seungyoon Lee , Jeongjin Lee , Chan Hwang
CPC classification number: G03F7/70633 , G03F7/706831 , G03F7/706837 , H01L22/20
Abstract: Provided are a method of selecting multi-wavelengths for overlay measurement, for accurately measuring overlay, and an overlay measurement method and a semiconductor device manufacturing method using the multi-wavelengths. The method of selecting multi-wavelengths for overlay measurement includes measuring an overlay at multiple positions on a wafer at each of a plurality of wavelengths within a set first wavelength range, selecting representative wavelengths that simulate the overlay of the plurality of wavelengths, from among the plurality of wavelengths, and allocating weights to the representative wavelengths, respectively.
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公开(公告)号：US11526087B2
公开(公告)日：2022-12-13
申请号：US17401611
申请日：2021-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Doogyu Lee , Seungyoon Lee
IPC: G03F7/20 , G03F9/00 , H01L21/027
Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.
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公开(公告)号：US20160071255A1
公开(公告)日：2016-03-10
申请号：US14940880
申请日：2015-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JEONGJIN LEE , Chan Hwang , Seungyoon Lee
CPC classification number: G06T7/001 , G03F7/70633 , G06T7/174 , G06T2207/10048 , G06T2207/10152 , G06T2207/30148 , G06T2207/30204 , H04N5/2256 , H04N5/332
Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.
Abstract translation: 一种用于测量覆盖层的方法包括接收使用具有第一波长的光捕获的第一覆盖标记的第一图像。 该方法包括接收使用具有不同于第一波长的第二波长的光捕获的第二重叠标记的第二图像。 该方法包括测量第一图像的中心部分和第二图像的中心部分之间的位移，其中第一和第二覆盖标记设置在不同的水平上。
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公开(公告)号：US11456222B2
公开(公告)日：2022-09-27
申请号：US16886237
申请日：2020-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woo-Yong Jung , Jinsun Kim , Seungyoon Lee , Jeongjin Lee , Chan Hwang
Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.
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公开(公告)号：US20210011373A1
公开(公告)日：2021-01-14
申请号：US16807734
申请日：2020-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
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Patent Agency Ranking
公开(公告)号：US09747682B2
公开(公告)日：2017-08-29
申请号：US14940880
申请日：2015-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeongjin Lee , Chan Hwang , Seungyoon Lee
CPC classification number: G06T7/001 , G03F7/70633 , G06T7/174 , G06T2207/10048 , G06T2207/10152 , G06T2207/30148 , G06T2207/30204 , H04N5/2256 , H04N5/332
Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.
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公开(公告)号：US11796923B2
公开(公告)日：2023-10-24
申请号：US17392788
申请日：2021-08-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunjay Kang , Chorong Park , Doogyu Lee , Seungyoon Lee , Jeongjin Lee
CPC classification number: G03F7/70633 , G03F7/2004 , G03F1/70
Abstract: Disclosed are an overlay correction method, a method of evaluating an overlay correction operation, and a method of fabricating a semiconductor device using the overlay correction method. The overlay correction method may include measuring an overlay between center lines of lower and upper patterns on a wafer, fitting each of components of the overlay with a polynomial function to obtain first fitting quantities, and summing the first fitting quantities to construct a correction model. The components of the overlay may include overlay components, which are respectively measured in two different directions parallel to a top surface of a reticle. The highest order of the polynomial function may be determined as an order, which minimizes a difference between the polynomial function and each of the components of the overlay or corresponds to an inflection point in a graph of the difference with respect to the highest order of the polynomial function.
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公开(公告)号：US11422455B2
公开(公告)日：2022-08-23
申请号：US17464826
申请日：2021-09-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doogyu Lee , Seungyoon Lee , Jeongjin Lee , Chan Hwang
IPC: G03F1/24 , H01L21/027 , G03F7/20
Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.
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公开(公告)号：US10566252B2
公开(公告)日：2020-02-18
申请号：US15860801
申请日：2018-01-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungyoon Lee , Chan Hwang
Abstract: A method of correcting an overlay includes: forming a first pattern on a first substrate; forming a second pattern on the first pattern; obtaining a first overlay error profile of the second pattern and obtaining a first overlay correction profile from the first overlay error profile; forming a third pattern on the second pattern; obtaining a second overlay error profile of the third pattern and obtaining a second overlay correction profile from the second overlay error profile; and forming the second pattern on a second substrate, wherein the forming of the second pattern on the second substrate includes: determining whether the second overlay correction profile has a non-correctable model parameter; and when the second overlay correction profile has the non-correctable model, obtaining a preliminary correction profile to correct a position of the second pattern to be formed on the second substrate.
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公开(公告)号：US20180330999A1
公开(公告)日：2018-11-15
申请号：US15860801
申请日：2018-01-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungyoon Lee , Chan Hwang
CPC classification number: H01L22/12 , G03F1/144 , G03F7/705 , G03F7/70525 , G03F7/70633 , G03F9/7019
Abstract: A method of correcting an overlay includes: forming a first pattern on a first substrate; forming a second pattern on the first pattern; obtaining a first overlay error profile of the second pattern and obtaining a first overlay correction profile from the first overlay error profile; forming a third pattern on the second pattern; obtaining a second overlay error profile of the third pattern and obtaining a second overlay correction profile from the second overlay error profile; and forming the second pattern on a second substrate, wherein the forming of the second pattern on the second substrate includes: determining whether the second overlay correction profile has a non-correctable model parameter; and when the second overlay correction profile has the non-correctable model, obtaining a preliminary correction profile to correct a position of the second pattern to be formed on the second substrate.
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