公开(公告)号：US20220283119A1

公开(公告)日：2022-09-08

申请号：US17499479

申请日：2021-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dusik BAE ,  Euihyun ROH ,  Sangyoon SHIN ,  Yongjun AHN ,  Youngwook KIM ,  Mira PARK ,  Hyunwoo LEE ,  Jeonghun LIM ,  Wonil CHOI ,  Sojung PARK ,  Jiwoong SHIN ,  Sangkyung LEE ,  Dongchol CHOI

IPC: G01N27/64 ,  G01N27/27 ,  G01N1/14 ,  G01N27/22 ,  H01L21/67

Abstract: A detection device includes a transfer device to travel along a rail while gripping a carrier, and a detection structure mounted on the carrier. The detection structure includes a collector to suck in air, a detector connected to the collector, the detector including a plurality of sensors, a plurality of sensor control boards receiving electrical signals from the plurality of sensors, the plurality of sensor control boards generating, based on the electrical signals, type data and concentration data regarding pollutants included in the air sucked in by the collector, and a communication control board connected to the plurality of sensor control boards.

公开(公告)号：US20180204777A1

公开(公告)日：2018-07-19

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik BAE ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  G01N21/65

CPC classification number: H01L22/12 ,  G01N21/65 ,  G01N21/9501 ,  G01N2021/8427 ,  G01N2021/95676 ,  H01L21/0334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.