公开(公告)号：US20170141156A1

公开(公告)日：2017-05-18

申请号：US15080576

申请日：2016-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Xueti TANG ,  Dustin ERICKSON ,  Vladimir NIKITIN ,  Roman CHEPULSKYY

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.

公开(公告)号：US20160211444A1

公开(公告)日：2016-07-21

申请号：US15081831

申请日：2016-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Volodymyr VOZNYUK ,  Dustin ERICKSON

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: An MTJ structure and method for providing the same are described. The method may include providing a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. Providing the free layer and/or the pinned layer may include depositing a portion of the desired MTJ layer, depositing a sacrificial layer, annealing the MTJ and sacrificial layer, removing at least a portion of the sacrificial layer, and depositing a remaining portion of the desired MTJ layer. The steps of depositing a sacrificial layer, annealing, and removing the sacrificial layer may be repeated multiple times with process conditions selected for each stage so as to reduce the risk of damage to the underlying MTJ layer. The desired MTJ layer may be the free layer, the pinned layer, or both.

Abstract translation: 描述了一种MTJ结构及其提供方法。 该方法可以包括在自由层和钉扎层之间提供自由层，钉扎层和非磁性间隔层。 提供自由层和/或被钉扎层可以包括沉积所需MTJ层的一部分，沉积牺牲层，退火MTJ和牺牲层，去除牺牲层的至少一部分，以及沉积剩余部分的 希望的MTJ层。 沉积牺牲层，退火和去除牺牲层的步骤可以重复多次，其中为每个阶段选择工艺条件，以便降低对下面的MTJ层的损害风险。 所需的MTJ层可以是自由层，钉扎层或两者。