公开(公告)号：US20170345868A1

公开(公告)日：2017-11-30

申请号：US15272413

申请日：2016-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Mohamad KROUNBI ,  Vladimir NIKITIN ,  Volodymyr VOZNYUK

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory device comprises a first reference magnetic layer, a first tunnel barrier layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. A magnitude of an in-plane magnetostatic field from the first reference magnetic layer at an edge of the free magnetic layer is less than about 500 Oe. One embodiment comprises a second reference magnetic layer on the second tunnel barrier layer in which the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer are arranged as a stack, and in which a width of the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier and the second reference magnetic layer in a second direction is less than about 30 nm.

公开(公告)号：US20170162246A1

公开(公告)日：2017-06-08

申请号：US15087939

申请日：2016-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Alexey Vasilyevich KHVALKOVSKIY ,  Vladimir NIKITIN ,  Dmytro APALKOV

IPC: G11C11/16

Abstract: A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.

公开(公告)号：US20170141156A1

公开(公告)日：2017-05-18

申请号：US15080576

申请日：2016-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Xueti TANG ,  Dustin ERICKSON ,  Vladimir NIKITIN ,  Roman CHEPULSKYY

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.