公开(公告)号：US20170141156A1

公开(公告)日：2017-05-18

申请号：US15080576

申请日：2016-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Xueti TANG ,  Dustin ERICKSON ,  Vladimir NIKITIN ,  Roman CHEPULSKYY

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.