公开(公告)号：US20240429039A1

公开(公告)日：2024-12-26

申请号：US18597101

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Hyea Ko ,  Soyoung Lee ,  Hoon Han ,  Byungkeun Hwang ,  Jaewoon Kim ,  Younghun Sung ,  Younjoung Cho

IPC: H01L21/02 ,  C09D5/00 ,  C09D5/26 ,  C09D175/02 ,  C23C16/56 ,  H01L21/285 ,  H01L21/3105

Abstract: Methods of depositing a film are provided. The methods may include providing a substrate that includes a first surface and a second surface adjacent to the first surface; forming a polymer sacrificial layer on the first surface by using a molecular layer deposition (MLD) process; forming a first film on the second surface; and removing the polymer sacrificial layer formed on the first surface. A functional group density of the first surface may be higher than a functional group density of the second surface, and the polymer sacrificial layer may include a thermally decomposable polymer.

公开(公告)号：US11901191B2

公开(公告)日：2024-02-13

申请号：US17535933

申请日：2021-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Hyea Ko ,  Hee Yeon Jeong ,  Jun Hee Cho ,  Gyu-Hee Park ,  Joong Jin Park ,  Byeong Il Yang ,  Youn Joung Cho ,  Ji Yu Choi

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula




wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.