公开(公告)号：US11861769B2

公开(公告)日：2024-01-02

申请号：US16936942

申请日：2020-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Saeeun Choi ,  Gihoon Park ,  Sangshin Park ,  Eun-Ae Cho

IPC: G06T11/60 ,  G06F3/04855 ,  G06N3/08 ,  G06T5/50 ,  G06F18/2431

CPC classification number: G06T11/60 ,  G06F3/04855 ,  G06F18/2431 ,  G06N3/08 ,  G06T5/50

Abstract: The electronic device includes a memory storing one or more instructions, and a processor configured to execute the one or more instructions to: receive a selection of a location of a synthesis region in an input image, obtain a target object image to be located in the synthesis region of the input image, by using at least one object detected in the input image, generate a composite image by combining the input image with the target object image, and control a display of the electronic device to display the composite image.

公开(公告)号：US12153622B2

公开(公告)日：2024-11-26

申请号：US17059000

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Ae Cho ,  Jinhyun Kim ,  Gihoon Park

IPC: G06F16/583 ,  G06F16/55 ,  G06T11/20 ,  G06V10/74 ,  G06V10/774

Abstract: A method for controlling an electronic device is disclosed. The method for controlling an electronic device comprises the steps of: receiving a sketch drawn by a user; acquiring at least one machine-generated image on the basis of the sketch by using an artificial intelligence model learned by an artificial intelligence algorithm; displaying the acquired at least one machine-generated image; receiving a user command for selecting one of at least one displayed machine-generated image, and searching for at least one piece of content corresponding to the image selected according to the user command; and providing the searched for at least one piece of content.

公开(公告)号：US12118032B2

公开(公告)日：2024-10-15

申请号：US17059000

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Ae Cho ,  Jinhyun Kim ,  Gihoon Park

IPC: G06F16/583 ,  G06F16/55 ,  G06T11/20 ,  G06V10/74 ,  G06V10/774

CPC classification number: G06F16/583 ,  G06F16/55 ,  G06F16/5854 ,  G06T11/203 ,  G06V10/74 ,  G06V10/774

Abstract: A method for controlling an electronic device is disclosed. The method for controlling an electronic device comprises the steps of: receiving a sketch drawn by a user; acquiring at least one machine-generated image on the basis of the sketch by using an artificial intelligence model learned by an artificial intelligence algorithm; displaying the acquired at least one machine-generated image; receiving a user command for selecting one of at least one displayed machine-generated image, and searching for at least one piece of content corresponding to the image selected according to the user command; and providing the searched for at least one piece of content.

公开(公告)号：US11514150B2

公开(公告)日：2022-11-29

申请号：US16642154

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Ae Cho ,  Jinhyun Kim ,  Gihoon Park ,  Jae-Ook Kwon

IPC: G06F21/36 ,  G06F16/583 ,  G06N3/08 ,  G06V40/16

Abstract: Provided is an artificial intelligence (AI) system simulating functions of a human brain, such as recognition and decision, by using a machine learning algorithm, such as deep-learning.
Image display apparatuses are more convenient for a user, by performing user authentication by using an authentication image set generated based on an object recognized from content viewed by the user.

公开(公告)号：US09455259B2

公开(公告)日：2016-09-27

申请号：US14716371

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Jin Lim ,  Youn-Soo Kim ,  Hyun Park ,  Soon-Gun Lee ,  Eun-Ae Cho ,  Chin-Moo Cho ,  Sung-Jin Kim ,  Seok-Woo Nam

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract translation: 半导体器件包括在电介质层和电容器的电极之间的界面处具有减少的氧缺陷的电容器。 半导体器件包括下金属层; 在下金属层上的介电层并含有第一金属; 在介电层上的牺牲层并含有第二金属; 和牺牲层上的上金属层。 牺牲层中的第二金属的电负性大于电介质层中第一金属的电负性。

公开(公告)号：US20160079247A1

公开(公告)日：2016-03-17

申请号：US14716371

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Jin Lim ,  Youn-Soo Kim ,  Hyun Park ,  Soon-Gun Lee ,  Eun-Ae Cho ,  Chin-Moo Cho ,  Sung-Jin Kim ,  Seok-Woo Nam

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract translation: 半导体器件包括在电介质层和电容器的电极之间的界面处具有减少的氧缺陷的电容器。 半导体器件包括下金属层; 在下金属层上的介电层并含有第一金属; 在介电层上的牺牲层并含有第二金属; 和牺牲层上的上金属层。 牺牲层中的第二金属的电负性大于电介质层中第一金属的电负性。