公开(公告)号：US09851898B2

公开(公告)日：2017-12-26

申请号：US15457904

申请日：2017-03-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Yong-Jin Lim ,  Byung-Hwan Kim ,  Youn-Soo Kim ,  Hyung-Jin Kim ,  Jeong-Hwan Noh ,  In-Su Park ,  Jung-Il Cho

IPC: G06F3/048 ,  G06F3/0488 ,  G06F3/0484

CPC classification number: G06F3/04886 ,  G06F3/04845 ,  G06F3/0488 ,  G06F3/04883 ,  G06F2203/04104 ,  G06F2203/04803 ,  G06F2203/04806 ,  G06F2203/04808

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

公开(公告)号：US09941114B2

公开(公告)日：2018-04-10

申请号：US14611691

申请日：2015-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Joung Cho ,  Youn-Soo Kim ,  Sang-Jun Yim ,  Myong-Woon Kim ,  Sang-Ick Lee ,  Sang-Chul Youn

IPC: H01L21/02 ,  H01L23/00 ,  C07F7/00 ,  H01L23/29 ,  H01L23/31 ,  C23C16/40 ,  C23C16/455 ,  H01L49/02

CPC classification number: H01L21/0228 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02189 ,  H01L23/291 ,  H01L23/3171 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.

公开(公告)号：US20140055390A1

公开(公告)日：2014-02-27

申请号：US13972694

申请日：2013-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jin Lim ,  Byung-Hwan Kim ,  Youn-Soo Kim ,  Hyung-Jin Kim ,  Jeong-Hwan Noh ,  In-Su Park ,  Jung-IL Cho

IPC: G06F3/0488

CPC classification number: G06F3/04886 ,  G06F3/04845 ,  G06F3/0488 ,  G06F3/04883 ,  G06F2203/04104 ,  G06F2203/04803 ,  G06F2203/04806 ,  G06F2203/04808

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

Abstract translation: 提供了用于改变具有触摸屏的电子设备中的显示范围的方法。 用于改变电子设备中的显示范围的方法包括：检测多个触摸; 考虑多个接触点来确定多个区域; 考虑到多个触摸点之间的距离的变化，改变多个区域中的至少一个区域的显示范围。

公开(公告)号：US20170098652A1

公开(公告)日：2017-04-06

申请号：US15229424

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yeol Kang ,  Ki-Vin Im ,  Youn-Soo Kim ,  Han-Jin Lim

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10805 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device having a capacitor includes a substrate which has a transistor, a first insulating pattern which is formed on the substrate and does not overlap a first contact node formed in the substrate, a second insulating pattern which is formed on the substrate, does not overlap a second contact node formed in the substrate, and is separated from the first insulating pattern, a first lower electrode which is formed on part of the substrate and sidewalls of the first insulating pattern, a second lower electrode which is formed on part of the substrate and sidewalls of the second insulating pattern, a dielectric layer pattern which is formed on the first lower electrode and the second lower electrode, and an upper electrode which is formed on the dielectric layer pattern. Related fabrication methods are also discussed.

公开(公告)号：US09716094B2

公开(公告)日：2017-07-25

申请号：US15229424

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yeol Kang ,  Ki-Vin Im ,  Youn-Soo Kim ,  Han-Jin Lim

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10805 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device having a capacitor includes a substrate which has a transistor, a first insulating pattern which is formed on the substrate and does not overlap a first contact node formed in the substrate, a second insulating pattern which is formed on the substrate, does not overlap a second contact node formed in the substrate, and is separated from the first insulating pattern, a first lower electrode which is formed on part of the substrate and sidewalls of the first insulating pattern, a second lower electrode which is formed on part of the substrate and sidewalls of the second insulating pattern, a dielectric layer pattern which is formed on the first lower electrode and the second lower electrode, and an upper electrode which is formed on the dielectric layer pattern. Related fabrication methods are also discussed.

公开(公告)号：US09594501B2

公开(公告)日：2017-03-14

申请号：US13972694

申请日：2013-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jin Lim ,  Byung-Hwan Kim ,  Youn-Soo Kim ,  Hyung-Jin Kim ,  Jeong-Hwan Noh ,  In-Su Park ,  Jung-Il Cho

IPC: G06F3/048 ,  G06F3/0488

CPC classification number: G06F3/04886 ,  G06F3/04845 ,  G06F3/0488 ,  G06F3/04883 ,  G06F2203/04104 ,  G06F2203/04803 ,  G06F2203/04806 ,  G06F2203/04808

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

Abstract translation: 提供了用于改变具有触摸屏的电子设备中的显示范围的方法。 用于改变电子设备中的显示范围的方法包括：检测多个触摸; 考虑多个接触点来确定多个区域; 考虑到多个触摸点之间的距离的变化，改变多个区域中的至少一个区域的显示范围。

公开(公告)号：US09455259B2

公开(公告)日：2016-09-27

申请号：US14716371

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Jin Lim ,  Youn-Soo Kim ,  Hyun Park ,  Soon-Gun Lee ,  Eun-Ae Cho ,  Chin-Moo Cho ,  Sung-Jin Kim ,  Seok-Woo Nam

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract translation: 半导体器件包括在电介质层和电容器的电极之间的界面处具有减少的氧缺陷的电容器。 半导体器件包括下金属层; 在下金属层上的介电层并含有第一金属; 在介电层上的牺牲层并含有第二金属; 和牺牲层上的上金属层。 牺牲层中的第二金属的电负性大于电介质层中第一金属的电负性。

公开(公告)号：US20160079247A1

公开(公告)日：2016-03-17

申请号：US14716371

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Jin Lim ,  Youn-Soo Kim ,  Hyun Park ,  Soon-Gun Lee ,  Eun-Ae Cho ,  Chin-Moo Cho ,  Sung-Jin Kim ,  Seok-Woo Nam

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract translation: 半导体器件包括在电介质层和电容器的电极之间的界面处具有减少的氧缺陷的电容器。 半导体器件包括下金属层; 在下金属层上的介电层并含有第一金属; 在介电层上的牺牲层并含有第二金属; 和牺牲层上的上金属层。 牺牲层中的第二金属的电负性大于电介质层中第一金属的电负性。

公开(公告)号：US20170185290A1

公开(公告)日：2017-06-29

申请号：US15457904

申请日：2017-03-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Yong-Jin Lim ,  Byung-Hwan Kim ,  Youn-Soo Kim ,  Hyung-Jin Kim ,  Jeong-Hwan Noh ,  In-Su Park ,  Jung-IL Cho

IPC: G06F3/0488 ,  G06F3/0484

CPC classification number: G06F3/04886 ,  G06F3/04845 ,  G06F3/0488 ,  G06F3/04883 ,  G06F2203/04104 ,  G06F2203/04803 ,  G06F2203/04806 ,  G06F2203/04808

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

公开(公告)号：US09685498B2

公开(公告)日：2017-06-20

申请号：US15201704

申请日：2016-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeol Kang ,  Suk-Jin Chung ,  Youn-Soo Kim ,  Jae-Hyoung Choi ,  Jae-Soon Lim ,  Min-Young Park

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L27/108 ,  H01L29/78

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.