公开(公告)号：US09859175B2

公开(公告)日：2018-01-02

申请号：US15142275

申请日：2016-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiwook Song ,  Bum-Soo Kim ,  Kye Hyun Baek ,  Masayuki Tomoyasu ,  Eunwoo Lee ,  Jong Seo Hong

IPC: H01L21/66 ,  G01R31/26 ,  H01J37/32

CPC classification number: H01L22/10 ,  G05B19/41875 ,  G05B2219/32234 ,  G05B2219/45031 ,  H01J37/3288 ,  H01J37/32972

Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.

公开(公告)号：US12068140B2

公开(公告)日：2024-08-20

申请号：US17372131

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin Oh ,  Taemin Earmme ,  Eunwoo Lee ,  Jongwoo Sun

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/244 ,  H01J37/32183 ,  H01J37/32715 ,  H01L22/20 ,  H01J2237/2007 ,  H01J2237/24564 ,  H01J2237/334 ,  H01L21/6831 ,  H01L21/68735

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

公开(公告)号：US20240371611A1

公开(公告)日：2024-11-07

申请号：US18774793

申请日：2024-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin Oh ,  Taemin Earmme ,  Eunwoo Lee ,  Jongwoo Sun

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.