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公开(公告)号：US12080941B2
公开(公告)日：2024-09-03
申请号：US17523027
申请日：2021-11-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Koog Kim , Young Jun Cho , Gwan Hyeob Koh , Kil Ho Lee , Jun Hoe Kim
CPC classification number: H01Q1/38 , G11C11/16 , H01F10/14 , H01F38/14 , H04B5/26 , H01F2038/143 , H04L27/2636
Abstract: A signal transferring device includes a first structure that includes a first magnetic thin film structure having a first magnetic vortex configured to receive a signal as an input signal, a second structure that is spaced apart from at least one side of the first structure, the second structure including a second magnetic thin film structure having a second magnetic vortex configured to transfer the signal, and a third structure that is spaced apart from at least one side of the second structure, the third structure including a third magnetic thin film structure having a third magnetic vortex configured to output the signal from the signal transferring device. The first and third structures have a symmetrical shape and the second structure has an asymmetrical shape.
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公开(公告)号：US11532782B2
公开(公告)日：2022-12-20
申请号：US17330969
申请日：2021-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kil Ho Lee , Woo Jin Kim , Gwan Hyeob Koh
Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.
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公开(公告)号：US20220246837A1
公开(公告)日：2022-08-04
申请号：US17486034
申请日：2021-09-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kil Ho Lee , Gwan Hyeob Koh , Yong Jae Kim , Geon Hee Bae
Abstract: A magnetic memory device includes a substrate having a first mold insulating film on a first region thereof, and a first structure on the substrate. The first structure includes a lower electrode, a magnetic tunnel junction (MTJ) structure on the lower electrode, and an upper electrode on the MTJ structure. A capping film is provided, which extends on the first mold insulating film and sidewalls of the first structure. A first etching stop layer is provided on the first structure and the capping film. A second mold insulating film is provided, which at least partially fills a space between the capping film and the first etching stop layer. A first metal structure is provided, which extends through a portion of the first etching stop layer and a portion of the second mold insulating film, and is electrically coupled to the MTJ structure.
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公开(公告)号：US11050016B2
公开(公告)日：2021-06-29
申请号：US16506391
申请日：2019-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kil Ho Lee , Woo Jin Kim , Gwan Hyeob Koh
Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.
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