公开(公告)号：US20200083444A1

公开(公告)日：2020-03-12

申请号：US16424608

申请日：2019-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YONGJIN PARK ,  JUNHWAN PARK ,  DONGJUN SEONG ,  GYUHWAN OH ,  HYUNGJONG JEONG

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The memory cell includes a variable resistance pattern, and a heater electrode disposed on the variable resistance pattern. The heater electrode includes a through-hole penetrating the heater electrode. The through-hole exposes one surface of the variable resistance pattern.

公开(公告)号：US20210359198A1

公开(公告)日：2021-11-18

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNGJONG JEONG ,  KI WOONG KIM ,  YOUNGHYUN KIM ,  JUNGHWAN PARK ,  BYOUNGJAE BAE ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.