公开(公告)号：US20180040571A1

公开(公告)日：2018-02-08

申请号：US15628349

申请日：2017-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYEON-WOO JANG ,  JUNGHWAN PARK ,  RAMAKANTH KAPPAGANTHU ,  SUNGJIN KIM ,  JUNYONG NOH ,  JUNG-HOON HAN ,  SEUNG SOO KIM ,  SUNGJIN KIM ,  SOJUNG LEE

IPC: H01L23/00

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L2924/3512

Abstract: A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.

公开(公告)号：US20220149270A1

公开(公告)日：2022-05-12

申请号：US17582628

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHWAN PARK ,  YOUNGHYUN KIM ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.

公开(公告)号：US20210359198A1

公开(公告)日：2021-11-18

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNGJONG JEONG ,  KI WOONG KIM ,  YOUNGHYUN KIM ,  JUNGHWAN PARK ,  BYOUNGJAE BAE ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.

公开(公告)号：US20210013261A1

公开(公告)日：2021-01-14

申请号：US16803574

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHWAN PARK ,  YOUNGHYUN KIM ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.