公开(公告)号：US20210359198A1

公开(公告)日：2021-11-18

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNGJONG JEONG ,  KI WOONG KIM ,  YOUNGHYUN KIM ,  JUNGHWAN PARK ,  BYOUNGJAE BAE ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.

公开(公告)号：US20170047509A1

公开(公告)日：2017-02-16

申请号：US15340330

申请日：2016-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul Park ,  BYOUNGJAE BAE ,  INHO KIM ,  SHIN KWON ,  EUNSUN NOH ,  INSUN PARK ,  SANGMIN LEE

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L21/0335 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.

Abstract translation: 制造半导体器件的方法包括在衬底上形成导电层，在导电层和衬底之间形成气隙或其它腔，以及图案化导电层以露出气隙。 该方法还可以包括在衬底和导电层之间形成导电柱。 气隙可以位于导电柱之间。