公开(公告)号：US20230069744A1

公开(公告)日：2023-03-02

申请号：US17891819

申请日：2022-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGMIN LEE ,  Seunghyeok JUNE ,  JIYUN BANG ,  SUNGSU KIM ,  JOON-SEO YIM

IPC: H04N17/00 ,  H04N17/02 ,  H04N9/69 ,  H04N9/67

Abstract: Provided is a method of operating an assessment device which communicates with an image sensor and includes an input buffer and a processor, the method including receiving, by the input buffer, raw image data from the image sensor that is configured to capture a test chart, generating, by the processor, conversion image data based on color domain transformation of the raw image data, generating, by the processor, estimation image data by estimating a non-distorted image based on the conversion image data, and assessing, by the processor, color distortion of the image sensor based on the estimation image data and the conversion image data.

公开(公告)号：US20230117343A1

公开(公告)日：2023-04-20

申请号：US18067298

申请日：2022-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGHOON KIM ,  SUNGSU KIM ,  JUNGMIN LEE

IPC: G06T7/00 ,  G06N3/08 ,  G06T5/00 ,  G06T5/50 ,  G06N3/044

Abstract: A method of predicting optimal values for a plurality of parameters used in an operation of an image signal processor includes: inputting initial values for the plurality of parameters to a machine learning model having an input layer, corresponding to the plurality of parameters, and an output layer corresponding to a plurality of evaluation items extracted from a result image generated by the image signal processor; obtaining evaluation scores for the plurality of evaluation items using an output of the machine learning model; adjusting weights, applied to the plurality of parameters, based on the evaluation scores; and determining the optimal values using the adjusted weights.

公开(公告)号：US20210266504A1

公开(公告)日：2021-08-26

申请号：US17078605

申请日：2020-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： KUNDONG KIM ,  SUNGSU KIM ,  YOUNGHOON KIM ,  JUNGMIN LEE

IPC: H04N9/083 ,  H04N9/825

Abstract: An electronic device includes a frequency analyzing circuit and a color difference calculating circuit. The frequency analyzing circuit receives an image signal including information about a subject, may convert the image signal into first color data which are based on a first color domain, converts the first color data into frequency data which are based on a frequency domain, and applies frequency weights corresponding to the frequency data to the first color data to generate processed color data. The color difference calculating circuit calculates color difference values for evaluating a color stain generated by the image signal, based on the processed color data. The frequency weights are selected based on sensitivity information of an observer according to a frequency change of the frequency data.

公开(公告)号：US20220149270A1

公开(公告)日：2022-05-12

申请号：US17582628

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHWAN PARK ,  YOUNGHYUN KIM ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.

公开(公告)号：US20210359198A1

公开(公告)日：2021-11-18

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNGJONG JEONG ,  KI WOONG KIM ,  YOUNGHYUN KIM ,  JUNGHWAN PARK ,  BYOUNGJAE BAE ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.

公开(公告)号：US20210013261A1

公开(公告)日：2021-01-14

申请号：US16803574

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHWAN PARK ,  YOUNGHYUN KIM ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.