公开(公告)号：US11646087B2

公开(公告)日：2023-05-09

申请号：US17134968

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongsung Cho ,  Bong-Kil Jung ,  Hangil Jeong

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/32 ,  G11C16/24 ,  G11C16/30 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C16/32

Abstract: An operating method of a nonvolatile memory device includes receiving, at the nonvolatile memory device, a suspend command, suspending, at the nonvolatile memory device, a program operation being performed, in response to the suspend command, receiving, at the nonvolatile memory device, a resume command, and resuming, at the nonvolatile memory device, the suspended program operation in response to the resume command. The program operation includes program loops, each of which includes a bit line setup interval, a program interval, and a verify interval. In the program interval of each of the program loops, a level of a program voltage to be applied to selected memory cells of the nonvolatile memory device increases as much as a first voltage. A difference between a level of the program voltage finally applied s suspend and a level of the program voltage applied first after resume is different from the first voltage.

公开(公告)号：US11942166B2

公开(公告)日：2024-03-26

申请号：US18192367

申请日：2023-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongsung Cho ,  Bong-Kil Jung ,  Hangil Jeong

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C16/32

CPC classification number: G11C16/3459 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C16/32

Abstract: An operating method of a nonvolatile memory device includes receiving, at the nonvolatile memory device, a suspend command, suspending, at the nonvolatile memory device, a program operation being performed, in response to the suspend command, receiving, at the nonvolatile memory device, a resume command, and resuming, at the nonvolatile memory device, the suspended program operation in response to the resume command. The program operation includes program loops, each of which includes a bit line setup interval, a program interval, and a verify interval. In the program interval of each of the program loops, a level of a program voltage to be applied to selected memory cells of the nonvolatile memory device increases as much as a first voltage. A difference between a level of the program voltage finally applied s suspend and a level of the program voltage applied first after resume is different from the first voltage.

公开(公告)号：US20230253057A1

公开(公告)日：2023-08-10

申请号：US18192367

申请日：2023-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongsung Cho ,  Bong-Kil Jung ,  Hangil Jeong

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/32 ,  G11C16/24 ,  G11C16/30 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C16/10 ,  G11C16/32 ,  G11C16/24 ,  G11C16/30 ,  G11C16/26

Abstract: An operating method of a nonvolatile memory device includes receiving, at the nonvolatile memory device, a suspend command, suspending, at the nonvolatile memory device, a program operation being performed, in response to the suspend command, receiving, at the nonvolatile memory device, a resume command, and resuming, at the nonvolatile memory device, the suspended program operation in response to the resume command. The program operation includes program loops, each of which includes a bit line setup interval, a program interval, and a verify interval. In the program interval of each of the program loops, a level of a program voltage to be applied to selected memory cells of the nonvolatile memory device increases as much as a first voltage. A difference between a level of the program voltage finally applied s suspend and a level of the program voltage applied first after resume is different from the first voltage.