公开(公告)号：US20230230840A1

公开(公告)日：2023-07-20

申请号：US17874766

申请日：2022-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyu LEE ,  Songyun KANG ,  Hiroshi SASAKI ,  Younseon WANG

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01J37/32449 ,  H01J2237/334

Abstract: A method of fabricating a semiconductor device comprises forming a mold layer on a substrate, forming a hardmask layer on the mold layer such that a portion of the mold layer is exposed, and using the hardmask layer to perform on the mold layer a cryogenic etching process. The cryogenic etching process includes supplying a chamber with a process gas including first and second process gases, and generating a plasma from the process gas. Radicals of the first process gas etch the exposed portion of the mold layer. Ammonium salt is produced based on the radicals etching the exposed portion of the mold layer. The second process gas includes an R—OH compound. The R is hydrogen, a C1 to C5 alkyl group, a C2 to C6 alkenyl group, a C2 to C6 alkynyl group, or a phenyl group. The second process gas reduces a production rate of the ammonium salt.

公开(公告)号：US20250125156A1

公开(公告)日：2025-04-17

申请号：US18629411

申请日：2024-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hiroshi SASAKI

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/28

Abstract: A method for manufacturing a semiconductor device is provided and includes: forming a stack structure on a substrate; forming a mask pattern on the stack structure; forming a trench inside the stack structure by performing an etching process, using a process gas, that etches a portion of the stack structure; and forming a protective film pattern on a sidewall and an upper surface of the mask pattern, wherein the process gas includes at least one from among MoF6, MoF4, AlF3 and MgF2, the protective film pattern includes a material different from a material of each of the mask pattern and the process gas, and a thickness of a portion of the protective film pattern formed on the upper surface of the mask pattern is greater than a thickness of a portion of the protective film pattern formed on the sidewall of the mask pattern.