公开(公告)号：US09263536B2

公开(公告)日：2016-02-16

申请号：US14062138

申请日：2013-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Gun Kim ,  Young-Min Ko ,  Kwang-Tae Hwang

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L29/423 ,  H01L49/02 ,  H01L21/28

CPC classification number: H01L29/4236 ,  H01L21/28008 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/92

Abstract: Methods include sequentially forming a first mold film, a first support film, a second mold film, and a second support film on a substrate, forming a contact hole through the second support film, the second mold film, the first support film and the first mold film, forming an electrode in the contact hole, and removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode.

Abstract translation: 方法包括在基板上依次形成第一模具膜，第一支撑膜，第二模塑膜和第二支撑膜，通过第二支撑膜，第二模制膜，第一支撑膜和第一支撑膜形成接触孔 模具膜，在接触孔中形成电极，以及去除第二支撑膜，第二模具膜和第一模具膜的部分，以使第一支撑膜的一部分作为围绕电极的第一支撑图案，并且留下一个 第二支撑膜的一部分作为围绕电极的第二支撑图案。

公开(公告)号：US20140134839A1

公开(公告)日：2014-05-15

申请号：US14062138

申请日：2013-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Gun Kim ,  Young-Min Ko ,  Kwang-Tae Hwang

IPC: H01L21/28

CPC classification number: H01L29/4236 ,  H01L21/28008 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/92

Abstract: Methods include sequentially forming a first mold film, a first support film, a second mold film, and a second support film on a substrate, forming a contact hole through the second support film, the second mold film, the first support film and the first mold film, forming an electrode in the contact hole, and removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode.

Abstract translation: 方法包括在基板上依次形成第一模具膜，第一支撑膜，第二模塑膜和第二支撑膜，通过第二支撑膜，第二模制膜，第一支撑膜和第一支撑膜形成接触孔 模具膜，在接触孔中形成电极，以及去除第二支撑膜，第二模具膜和第一模具膜的部分，以使第一支撑膜的一部分作为围绕电极的第一支撑图案，并且留下一个 第二支撑膜的一部分作为围绕电极的第二支撑图案。

公开(公告)号：US09142610B2

公开(公告)日：2015-09-22

申请号：US14074959

申请日：2013-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hong-Gun Kim ,  Kwang-Tae Hwang ,  Young-Min Ko

IPC: H01L27/00 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/87 ,  H01L28/90

Abstract: A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode, the first supporter, and the second supporter; and an upper electrode formed on the dielectric film, wherein the first and second supporters are positioned between the lower electrodes, and the first and second supporters include a first material and a second material.

Abstract translation: 一种半导体器件及其制造方法，该器件包括其上形成有晶体管的衬底; 形成在所述基板上的多个下电极; 在所述多个下电极上的第一支撑件和第二支撑件; 形成在下电极，第一支撑体和第二支撑体上的电介质膜; 以及形成在所述电介质膜上的上电极，其中所述第一和第二支撑件位于所述下电极之间，并且所述第一和第二支撑件包括第一材料和第二材料。