公开(公告)号：US20250068333A1

公开(公告)日：2025-02-27

申请号：US18945678

申请日：2024-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin AHN ,  Seoyeong LEE ,  Hoon JO

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  H10B43/27

Abstract: In some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.

公开(公告)号：US20240153567A1

公开(公告)日：2024-05-09

申请号：US18209069

申请日：2023-06-13

Applicant: Samsung Electronics Co.,Ltd.

Inventor： Hyojin AHN ,  Seongkuk KIM ,  Dongwoo SHIN ,  Seoyeong LEE ,  Changjun LEE ,  Hoon JO

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16

CPC classification number: G11C16/3409 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16

Abstract: The present disclosure provides apparatuses and methods for operating a flash memory for programming operating system (OS) data before an surface mount technology (SMT) process. In some embodiments, the method includes erasing a plurality of memory cells in a memory block, reducing a lateral charge loss of the plurality of memory cells due to high temperature degradation during the SMT process by applying a pre-program voltage to word lines coupled to the memory block, and performing multi-bit programming of the OS data in the plurality of memory cells, prior to performing the SMT process. The applying of the pre-program voltage causes threshold voltages of the plurality of memory cells to increase.

公开(公告)号：US20220385817A1

公开(公告)日：2022-12-01

申请号：US17693553

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho June LEU ,  Joong Sik KIM ,  Dong Yeob SHIN ,  Yeong Min LEE ,  Hoon JO

IPC: H04N5/232 ,  G06T7/246 ,  G06T7/11 ,  G06T7/194 ,  G06T5/50

Abstract: An image processing device is provided. The image processing device includes an image signal processor for processing a raw image received from a camera and a memory for storing a previous frame of the raw image and an intermediate image generated by the processing, wherein the image signal processor estimates an initial global motion vector between the previous frame and a current frame, receives focus region information in the raw image, divides the raw image into a foreground (FG) region and a background (BG) region based on the focus region information, generates a final global motion vector by divisionally updating the initial global motion vector based on the FG region and the BG region, performs motion compensation by applying the final global motion vector to the previous frame, and outputs a final image by blending the motion-compensated previous frame with the current frame.