公开(公告)号：US20240153567A1

公开(公告)日：2024-05-09

申请号：US18209069

申请日：2023-06-13

Applicant: Samsung Electronics Co.,Ltd.

Inventor： Hyojin AHN ,  Seongkuk KIM ,  Dongwoo SHIN ,  Seoyeong LEE ,  Changjun LEE ,  Hoon JO

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16

CPC classification number: G11C16/3409 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16

Abstract: The present disclosure provides apparatuses and methods for operating a flash memory for programming operating system (OS) data before an surface mount technology (SMT) process. In some embodiments, the method includes erasing a plurality of memory cells in a memory block, reducing a lateral charge loss of the plurality of memory cells due to high temperature degradation during the SMT process by applying a pre-program voltage to word lines coupled to the memory block, and performing multi-bit programming of the OS data in the plurality of memory cells, prior to performing the SMT process. The applying of the pre-program voltage causes threshold voltages of the plurality of memory cells to increase.

公开(公告)号：US20240152280A1

公开(公告)日：2024-05-09

申请号：US18220489

申请日：2023-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin AHN ,  Dongwoo SHIN ,  Seongkuk KIM ,  Changjun LEE ,  Sungjun HONG

IPC: G06F3/06 ,  G06F11/10

CPC classification number: G06F3/0619 ,  G06F3/0647 ,  G06F3/0679 ,  G06F11/1008

Abstract: The present disclosure provides methods and apparatuses for programming operating system (OS) data before a surface mount technology (SMT) process. In some embodiments, a method includes erasing a plurality of memory cells in a memory block, classifying word lines coupled to the memory block into first word lines to be programmed with OS data and second word lines to be programmed in a state pattern, programming, with a multi-bit program, the OS data into first memory cells of the plurality of memory cells coupled to the first word lines, and programming second memory cells of the plurality of memory cells coupled to the second word lines to have the state pattern.