PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD USING THE SAME

    公开(公告)号:US20240192154A1

    公开(公告)日:2024-06-13

    申请号:US18243835

    申请日:2023-09-08

    CPC classification number: G01N23/2251 G01N2223/42 G01N2223/6116

    Abstract: A pattern inspection apparatus includes a sample including a plurality of holes having thicknesses that are different from each other, an electron gun configured to generate an input electron beam and emit the input electron beam onto a wafer and the sample, a stage configured to support the wafer and the sample, a detector configured to generate a scanning electron microscope (SEM) image by detecting emitted electrons from the wafer and the sample, and a processor configured to process the SEM image into a three-dimensional profiling image containing depth information of the wafer and determine whether a condition of the input electron beam has changed based on the processing of the SEM image.

    Test apparatus and test method thereof

    公开(公告)号:US12092656B2

    公开(公告)日:2024-09-17

    申请号:US17721522

    申请日:2022-04-15

    CPC classification number: G01R1/06727 G01R1/04

    Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

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