公开(公告)号：US20230194567A1

公开(公告)日：2023-06-22

申请号：US17878414

申请日：2022-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangeun Kim ,  Seungbum Hong ,  Sungyoon Ryu ,  Hoon Kim ,  Jiwon Yeom ,  Seokjung Yun ,  Souk Kim ,  Younghoon Sohn ,  Yusin Yang

IPC: G01Q40/00 ,  H01L21/66 ,  G01Q70/10

CPC classification number: G01Q40/00 ,  H01L22/12 ,  G01Q70/10 ,  H01L27/10876

Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

公开(公告)号：US12183677B2

公开(公告)日：2024-12-31

申请号：US18526208

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20240105604A1

公开(公告)日：2024-03-28

申请号：US18526208

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US11854975B2

公开(公告)日：2023-12-26

申请号：US17459406

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20200251417A1

公开(公告)日：2020-08-06

申请号：US16853850

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L23/522 ,  H01L21/768 ,  H01L27/11575 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US12092656B2

公开(公告)日：2024-09-17

申请号：US17721522

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyoon Ryu ,  Seungbum Hong ,  Kwangeun Kim ,  Hoon Kim ,  Jiwon Yeom ,  Seokjung Yun ,  Souk Kim ,  Younghoon Sohn ,  Yusin Yang

IPC: G01R1/067 ,  G01N29/06 ,  G01R1/04 ,  G01R1/073

CPC classification number: G01R1/06727 ,  G01R1/04

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

公开(公告)号：US20210391260A1

公开(公告)日：2021-12-16

申请号：US17459406

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L21/768 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US11107765B2

公开(公告)日：2021-08-31

申请号：US16853850

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L21/768 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US10211154B2

公开(公告)日：2019-02-19

申请号：US15350305

申请日：2016-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/115 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L21/768 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11575

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.