公开(公告)号：US11735627B2

公开(公告)日：2023-08-22

申请号：US17324610

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon Park ,  Jongchul Park ,  Bokyoung Lee ,  Jeongyun Lee ,  Hyunggoo Lee ,  Yeondo Jung ,  Haegeon Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/0657 ,  H01L27/088 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

公开(公告)号：US12068369B2

公开(公告)日：2024-08-20

申请号：US18348904

申请日：2023-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon Park ,  Jongchul Park ,  Bokyoung Lee ,  Jeongyun Lee ,  Hyunggoo Lee ,  Yeondo Jung ,  Haegeon Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/0657 ,  H01L27/088 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

公开(公告)号：US20230352527A1

公开(公告)日：2023-11-02

申请号：US18348904

申请日：2023-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon PARK ,  Jongchul Park ,  Bokyoung Lee ,  Jeongyun Lee ,  Hyunggoo Lee ,  Yeondo Jung ,  Haegeon Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/0657 ,  H01L27/088 ,  H01L29/78696 ,  H01L29/42392

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

公开(公告)号：US10153358B2

公开(公告)日：2018-12-11

申请号：US15390754

申请日：2016-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungseok Min ,  Seongjin Nam ,  Sughyun Sung ,  Youngmook Oh ,  Migyeong Gwon ,  Hyungdong Kim ,  InWon Park ,  Hyunggoo Lee

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L23/535 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/683

Abstract: A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the substrate. The fin structure includes a lower pattern and an active pattern vertically protruding from a top surface of the lower pattern. The top surface of the lower pattern includes a flat portion substantially parallel to the top surface of the substrate. The lower pattern includes a first sidewall extending in the first direction and a second sidewall extending in a second direction crossing the first direction. The first sidewall is inclined relative to the top surface of the substrate at a first angle greater than a second angle corresponding to the second sidewall that is inclined relative to the top surface of the substrate.