公开(公告)号：US20240072177A1

公开(公告)日：2024-02-29

申请号：US18345130

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Kim ,  Yeondo Jung ,  Gwirim Park ,  Yelin Lee ,  Kichul Kim ,  Kyungin Choi

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/78696 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/775 ,  H01L29/4908

Abstract: A semiconductor device includes channels spaced apart from each other on a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate structure on the substrate and bordering lower and upper surfaces and a first sidewall of at least a portion of each of the channels, and a source/drain layer on a portion of the substrate adjacent to the gate structure and contacting second sidewalls of the channels. A nitrogen-containing portion is formed at an upper portion of an uppermost one of the channels, and may be doped with nitrogen.

公开(公告)号：US20240088150A1

公开(公告)日：2024-03-14

申请号：US18300867

申请日：2023-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeondo Jung ,  Chul Kim ,  Kichul Kim ,  Gwirim Park ,  Haejun Yu ,  Chaeyeong Lee ,  Kyungin Choi

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes a pair of fin-type active regions, which extend in a first horizontal direction on a substrate, and a fin isolation insulator between ones of the pair of fin-type active regions to extend in a second horizontal direction that intersects with the first horizontal direction. The fin isolation insulator includes a first nitrogen-rich barrier film having at least one protrusion at a position that is higher than respective top surfaces of each of the pair of fin-type active regions with respect to the substrate, and a second nitrogen-rich barrier film, which is spaced apart from the first nitrogen-rich barrier film and is in a space defined by the first nitrogen-rich barrier film.

公开(公告)号：US11735627B2

公开(公告)日：2023-08-22

申请号：US17324610

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon Park ,  Jongchul Park ,  Bokyoung Lee ,  Jeongyun Lee ,  Hyunggoo Lee ,  Yeondo Jung ,  Haegeon Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/0657 ,  H01L27/088 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

公开(公告)号：US12068369B2

公开(公告)日：2024-08-20

申请号：US18348904

申请日：2023-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon Park ,  Jongchul Park ,  Bokyoung Lee ,  Jeongyun Lee ,  Hyunggoo Lee ,  Yeondo Jung ,  Haegeon Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/0657 ,  H01L27/088 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

公开(公告)号：US20230352527A1

公开(公告)日：2023-11-02

申请号：US18348904

申请日：2023-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon PARK ,  Jongchul Park ,  Bokyoung Lee ,  Jeongyun Lee ,  Hyunggoo Lee ,  Yeondo Jung ,  Haegeon Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/0657 ,  H01L27/088 ,  H01L29/78696 ,  H01L29/42392

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.