公开(公告)号：US20200098436A1

公开(公告)日：2020-03-26

申请号：US16364588

申请日：2019-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Bum Kim ,  II-Han Park ,  Ji-Young Lee ,  Su-Chang Jeon

IPC: G11C16/26 ,  G11C11/56 ,  G11C16/24 ,  G11C16/10 ,  G11C16/34 ,  G11C16/14 ,  G06F11/10 ,  G11C29/52

Abstract: Nonvolatile memory device includes a memory cell array including pages, each of the pages including memory cells storing data bits, each of the data bits being selectable by a different threshold voltage, a page buffer circuit coupled to the memory cell array through bit-lines, the page buffer circuit including page buffers to sense data from selected memory cells, and perform a first read operation and a second read operation, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch configured to sequentially store results of the two sequential sensing operations, and a control circuit to control the page buffers to store a result of the first read operation, reset the latches after completion of the first read operation, and perform the second read operation based on a valley determined based on the result of the first read operation.