公开(公告)号：US20170047509A1

公开(公告)日：2017-02-16

申请号：US15340330

申请日：2016-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul Park ,  BYOUNGJAE BAE ,  INHO KIM ,  SHIN KWON ,  EUNSUN NOH ,  INSUN PARK ,  SANGMIN LEE

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L21/0335 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.

Abstract translation: 制造半导体器件的方法包括在衬底上形成导电层，在导电层和衬底之间形成气隙或其它腔，以及图案化导电层以露出气隙。 该方法还可以包括在衬底和导电层之间形成导电柱。 气隙可以位于导电柱之间。