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公开(公告)号:US10665702B2
公开(公告)日:2020-05-26
申请号:US16151511
申请日:2018-10-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Myung Gil Kang , Ill Seo Kang , Yong Hee Park , Sang Hoon Baek , Keon Yong Cheon
IPC: H01L29/66 , H01L29/732 , H01L27/082 , H01L29/06 , H01L29/08 , H01L21/28 , H01L29/49 , H01L29/51 , H01L21/308 , H01L29/10 , H01L27/06 , H01L21/8249 , H01L21/8238
Abstract: A vertical bipolar transistor including a substrate including a first well of a first conductivity type and a second well of a second conductivity type different from the first conductivity type, the first well adjoining the second well, a first fin extending, from the first well, a second fin extending from the first well, a third fin extending from the second well, a first conductive region on the first fin, having the second conductivity type and configured to serve as an emitter of the vertical bipolar transistor, a second conductive region on the second fin, having the first conductivity type, and configured to serve as a base of the vertical bipolar transistor, and a third conductive region on the third fin, having the second conductivity type, and configured to serve as a collector of the vertical bipolar transistor may be provided.