Selectively modified nanoporous structure and production methods thereof
    4.
    发明授权
    Selectively modified nanoporous structure and production methods thereof 有权
    选择性改性的纳米孔结构及其制备方法

    公开(公告)号:US09352285B2

    公开(公告)日:2016-05-31

    申请号:US14024092

    申请日:2013-09-11

    Abstract: A method of selectively modifying a structure including preparing a structure including a nano-sized through-pore, filling the nano-sized through-pore with a surfactant, removing a portion of the surfactant from both ends of the nano-sized through-pore to expose a portion of an internal surface of the nano-sized through-pore, modifying the exposed internal surface of the nano-sized through-pore with a first compound, removing the surfactant from the nano-sized through-pore having the internal surface modified with the first compound to expose an internal surface that remains unmodified with the first compound, and modifying with a second compound the exposed internal surface without being modified with the first compound, the second compound being different from the first compound.

    Abstract translation: 选择性地修饰结构的方法,包括制备包括纳米尺寸通孔的结构,用表面活性剂填充纳米尺寸的通孔,从纳米尺寸的通孔的两端除去一部分表面活性剂到 暴露纳米尺寸通孔的内表面的一部分,用第一化合物修饰纳米尺寸通孔的暴露内表面,从具有内表面改性的纳米尺寸通孔去除表面活性剂 第一化合物暴露出用第一化合物保持未修饰的内表面,并且用第二化合物修饰暴露的内表面而不用第一化合物进行改性,第二化合物不同于第一化合物。

    RAID storage device, host, and RAID system

    公开(公告)号:US11625193B2

    公开(公告)日:2023-04-11

    申请号:US17351506

    申请日:2021-06-18

    Abstract: A redundant array of independent disks (RAID) storage device including; a memory device including first memory devices configured to store at least one of data chunks and corresponding parity (data chunks/parity) and a second memory device configured to serve as a spare memory region, and a RAID controller including a RAID internal memory configured to store a count table and configured to control performing of a rebuild operation in response to a command received from a host, wherein upon identification of a failed first memory device, the RAID controller accesses used regions of non-failed first memory devices based on the count table and rebuilds data of the failed first memory device using the second memory device.

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