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公开(公告)号：US20140002510A1
公开(公告)日：2014-01-02
申请号：US14018569
申请日：2013-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyuck Woo , Jae Goo Lee
CPC classification number: G09G3/3688 , G09G5/02
Abstract: Methods of driving source lines and/or circuits/systems for driving source lines are provided. Source lines of a display device are driven by comparing first data for driving a first buffer associated with a first source line of the display device and second data for driving a second buffer associated with a second source line of the display device and selectively disabling the second buffer and driving the second source line of the display device with the first buffer based on the comparison of the first and second data.
Abstract translation: 提供了用于驱动源极线的源极线和/或电路/系统的驱动方法。 通过比较用于驱动与显示装置的第一源极线相关联的第一缓冲器的第一数据和用于驱动与显示装置的第二源极线相关联的第二缓冲器的第二数据来驱动显示装置的源极线，并且选择性地禁用第二数据 基于第一和第二数据的比较，缓冲并驱动具有第一缓冲器的显示装置的第二源极线。
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公开(公告)号：US20150132906A1
公开(公告)日：2015-05-14
申请号：US14599621
申请日：2015-01-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Il Chang , Young Woo Park , Jae Goo Lee
IPC: H01L27/115 , H01L21/311
CPC classification number: H01L27/11582 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/42324 , H01L29/4234
Abstract: A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure, charge storing patterns interposed between the semiconductor patterns and the electrode structure, and blocking insulating patterns interposed between the charge storing patterns and the electrode structure. Each of the blocking insulating patterns surrounds the semiconductor patterns, and the charge storing patterns are horizontally spaced from each other and configured in such a way as to each be disposed around a respective one of the semiconductor patterns. Also, each of the charge storing patterns includes a plurality of horizontal segments, each interposed between vertically adjacent ones of the electrodes.
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公开(公告)号：US08970465B2
公开(公告)日：2015-03-03
申请号：US14018569
申请日：2013-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyuck Woo , Jae Goo Lee
CPC classification number: G09G3/3688 , G09G5/02
Abstract: Methods of driving source lines and/or circuits/systems for driving source lines are provided. Source lines of a display device are driven by comparing first data for driving a first buffer associated with a first source line of the display device and second data for driving a second buffer associated with a second source line of the display device and selectively disabling the second buffer and driving the second source line of the display device with the first buffer based on the comparison of the first and second data.
Abstract translation: 提供了用于驱动源极线的源极线和/或电路/系统的驱动方法。 通过比较用于驱动与显示装置的第一源极线相关联的第一缓冲器的第一数据和用于驱动与显示装置的第二源极线相关联的第二缓冲器的第二数据来驱动显示装置的源极线，并且选择性地禁用第二数据 基于第一和第二数据的比较，缓冲并驱动具有第一缓冲器的显示装置的第二源极线。
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公开(公告)号：US09893074B2
公开(公告)日：2018-02-13
申请号：US14662919
申请日：2015-03-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Goo Lee , Young Woo Park
IPC: H01L29/792 , H01L29/788 , H01L27/11556 , H01L27/11565 , H01L27/11582 , H01L27/11519 , H01L27/11548 , H01L27/11575 , H01L29/66 , H01L29/78 , H01L29/49
CPC classification number: H01L27/11556 , H01L27/11519 , H01L27/11548 , H01L27/11565 , H01L27/11575 , H01L27/11582 , H01L29/4975 , H01L29/66666 , H01L29/7827
Abstract: A semiconductor device including a substrate, channels, a gate stack, and a pad separating region. The substrate has a pad region adjacent to a cell region. The channels extend in a direction crossing an upper surface of the substrate in the cell region. The gate stack includes a plurality of gate electrode layers spaced apart from each other on the substrate and enclosing the channels in the cell region. The pad separating region separates the gate stack into two or more regions in the pad region. The gate electrode layers have different lengths in the pad region.
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