Air purifier
    1.
    外观设计

    公开(公告)号:USD1031959S1

    公开(公告)日:2024-06-18

    申请号:US29831626

    申请日:2022-03-22

    摘要: FIG. 1 is a front perspective view of an air purifier, showing our new design;
    FIG. 2 is a front view thereof;
    FIG. 3 is a rear view thereof;
    FIG. 4 is a left-side view thereof;
    FIG. 5 is a right-side view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof;
    FIG. 8 is an enlarged view of the portion 8 in FIG. 1;
    FIG. 9 is an enlarged view of the portion 9 in FIG. 1;
    FIG. 10 is an enlarged view of the portion 10 in FIG. 2;
    FIG. 11 is an enlarged view of the portion 11 in FIG. 3;
    FIG. 12 is an enlarged view of the portion 12 in FIG. 4; and,
    FIG. 13 is an enlarged view of the portion 13 in FIG. 6.
    The even-dash broken lines illustrating portions of the air purifier form no part of the claimed design.
    The dot-dash broken lines encircling enlargement portions of the claimed design form no part of the claimed design.

    Apparatus and method for managing interference in wireless communication system

    公开(公告)号:US11444744B2

    公开(公告)日:2022-09-13

    申请号:US16840979

    申请日:2020-04-06

    摘要: An apparatus of a base station in a wireless communication system supporting time division duplex (TDD) and a method thereof are provided. The apparatus includes at least one transceiver, and at least one processor operatively connected with the at least one transceiver. The at least one processor may be configured to perform signaling for preventing transmission of an uplink (UL) signal in a cell, and measure a strength of a downlink (DL) signal received from at least one base station during at least one symbol in a UL subframe. The apparatus relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long-Term Evolution (LTE).

    SEMICONDUCTOR DEVICE
    5.
    发明公开

    公开(公告)号:US20240321875A1

    公开(公告)日:2024-09-26

    申请号:US18603591

    申请日:2024-03-13

    摘要: A semiconductor device includes a substrate, an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a plurality of nanosheet stacks on the active region, a plurality of gate lines extending in a second horizontal direction intersecting the first horizontal direction, on the active region, and surrounding the plurality of nanosheet stacks, and a first insulating pattern between two nanosheet stacks adjacent in the first horizontal direction among the plurality of nanosheet stacks, on the active region, and extending in a vertical direction perpendicular to the first horizontal direction and the second horizontal direction, wherein the first insulating pattern is in contact with the plurality of nanosheet stacks.