MEMORY DEVICE, MEMORY SYSTEM AND METHOD FOR OPERATING MEMORY SYSTEM

    公开(公告)号:US20230402074A1

    公开(公告)日:2023-12-14

    申请号:US18166737

    申请日:2023-02-09

    CPC classification number: G11C7/222 G11C7/1093 G11C29/52

    Abstract: Provided is a memory system including: a memory device; and a memory controller configured to transmit a command and address (CA) signal and a data clock (WCK) signal to the memory device, and transmitting a data (DQ) signal to the memory device or receive the DQ signal from the memory device. The memory device may include a clock distribution network configured to generate a first division clock signal for sampling the CA signal and a second division clock signal for sampling the DQ signal from the data clock signal, a CA sampler configured to sample the CA signal based on the first division clock signal, and a CA parity check circuitry configured to output a parity error signal in response to a parity error occurring for the CA signal, and the memory controller may include processing circuitry configured to enter CA training in response to receiving the parity error signal.

    CALIBRATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

    公开(公告)号:US20230186958A1

    公开(公告)日:2023-06-15

    申请号:US17903578

    申请日:2022-09-06

    CPC classification number: G11C7/1048 G11C2207/2254

    Abstract: A calibration circuit includes a first, second and third pull-up units each connected to a first power supply node, and first and second pull-down units each connected to a second power supply node. A first code generator is configured to generate a first code by comparing a voltage of a pad at which the first pull-up unit is connected to an external resistor with a reference voltage, and a second code generator is configured to generate a second code by comparing a voltage of a first intermediate node with the reference voltage and output the second code to the first and second pull-down units. A third code generator is configured to generate a third code by comparing a voltage of a second intermediate node between the second pull-down unit and the third pull-up unit with the reference voltage.

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