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公开(公告)号：US20220271212A1
公开(公告)日：2022-08-25
申请号：US17555812
申请日：2021-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan Jang , Hyeokshin Kwon , Jaeho Shin , Jaehyeong Lee , Insu Jeon , Sungho Han
Abstract: A multi-mode resonator is provided. The multi-mode resonator includes a housing and a cavity disposed in the housing, wherein the cavity includes a main cavity and a plurality of first subcavities disposed on a first lateral side of the main cavity.
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公开(公告)号：US09825182B2
公开(公告)日：2017-11-21
申请号：US15051270
申请日：2016-02-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Insu Jeon , Jiyeon Ku , Hyowon Kim
CPC classification number: H01L29/78696 , H01L21/02425 , H01L21/02488 , H01L21/02499 , H01L21/02527 , H01L21/02664 , H01L21/044 , H01L29/1606 , H01L29/66045
Abstract: A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first material at a first pressure and a first temperature, and intercalating a second material between the metal layer and the graphene layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature. Accordingly, the first material and the second material are chemically bonded to each other to form an insulating layer, and the insulating layer may be between the metal layer and the graphene layer.
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公开(公告)号：US12062826B2
公开(公告)日：2024-08-13
申请号：US17515055
申请日：2021-10-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaehyeong Lee , Hyeokshin Kwon , Jaeho Shin , Taehwan Jang , Insu Jeon
Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.
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公开(公告)号：US11574229B2
公开(公告)日：2023-02-07
申请号：US16916832
申请日：2020-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyeong Lee , Hyeokshin Kwon , Insu Jeon
Abstract: Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.
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公开(公告)号：US10249473B2
公开(公告)日：2019-04-02
申请号：US14848723
申请日：2015-09-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Abstract: A transporting apparatus configured to transport an object to a storage container includes: a transporting rod having one end configured to connect to the object, the transporting rod extending in a transporting direction of the object; a transporting portion that moves the transporting rod in the transporting direction of the object; and a contact sensor portion provided on an outer wall of the transporting rod and configured to sense contact between the transporting rod and the storage container.
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Patent Agency Ranking
公开(公告)号：US10153732B2
公开(公告)日：2018-12-11
申请号：US15364433
申请日：2016-11-30
Inventor： Insu Jeon , Jhinhwan Lee , Hwansoo Suh
Abstract: An amplifier circuit and a method of recovering an input signal in the amplifier circuit are provided. The amplifier circuit may recover an input signal by using a time constant and an output signal of a signal amplifier which is delayed by a certain period, based on characteristics of an inverse Laplace transform of a transfer function of the signal amplifier. A time required for recovering the input signal may be shorter than the time constant of the signal amplifier.
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公开(公告)号：US09882112B2
公开(公告)日：2018-01-30
申请号：US15388668
申请日：2016-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeokshin Kwon , Youngtek Oh , Insu Jeon
CPC classification number: H01L39/223 , G06N99/002 , H01L27/18
Abstract: Multi-qubit devices and quantum computers including the same are provided. The multi-qubit device may include a first layer including a plurality of qubits; a second layer that is disposed on the first layer, and comprises a plurality of flux generating elements that apply flux to the plurality of qubits, a plurality of wire patterns that provide current to the plurality of flux generating elements, and a plurality of plugs that are disposed perpendicular to the plurality of flux generating elements and the plurality of wire patterns and interconnect the plurality of flux generating elements and the plurality of wire patterns. Each of the plurality of flux generating elements may be integrated with a corresponding one of the plurality of wire patterns and a corresponding one of the plurality of plugs.
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公开(公告)号：US11799010B2
公开(公告)日：2023-10-24
申请号：US17227456
申请日：2021-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngtek Oh , Jinwook Jung , Seunggeol Nam , Wontaek Seo , Insu Jeon
IPC: H01L29/45
CPC classification number: H01L29/45
Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.
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公开(公告)号：US11004949B2
公开(公告)日：2021-05-11
申请号：US16238706
申请日：2019-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngtek Oh , Jinwook Jung , Seunggeol Nam , Wontaek Seo , Insu Jeon
IPC: H01L31/119 , H01L29/45
Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.
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公开(公告)号：US20200044041A1
公开(公告)日：2020-02-06
申请号：US16238706
申请日：2019-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngtek Oh , Jinwook Jung , Seunggeol Nam , Wontaek Seo , Insu Jeon
IPC: H01L29/45
Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.
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