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    Multi-qubit device and quantum computer including the same
    1.
    发明授权
    Multi-qubit device and quantum computer including the same 有权

    公开(公告)号：US09882112B2

    公开(公告)日：2018-01-30

    申请号：US15388668

    申请日：2016-12-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyeokshin Kwon ,  Youngtek Oh ,  Insu Jeon

    IPC: H01L21/06 ,  H01L39/22 ,  G06N99/00 ,  H01L27/18

    CPC classification number: H01L39/223 ,  G06N99/002 ,  H01L27/18

    Abstract: Multi-qubit devices and quantum computers including the same are provided. The multi-qubit device may include a first layer including a plurality of qubits; a second layer that is disposed on the first layer, and comprises a plurality of flux generating elements that apply flux to the plurality of qubits, a plurality of wire patterns that provide current to the plurality of flux generating elements, and a plurality of plugs that are disposed perpendicular to the plurality of flux generating elements and the plurality of wire patterns and interconnect the plurality of flux generating elements and the plurality of wire patterns. Each of the plurality of flux generating elements may be integrated with a corresponding one of the plurality of wire patterns and a corresponding one of the plurality of plugs.

    Three-dimensional transmon qubit apparatus
    5.
    发明授权
    Three-dimensional transmon qubit apparatus 有权

    公开(公告)号：US11574229B2

    公开(公告)日：2023-02-07

    申请号：US16916832

    申请日：2020-06-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaehyeong Lee ,  Hyeokshin Kwon ,  Insu Jeon

    IPC: G06N10/00 ,  H01L27/18

    Abstract: Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.

    Quantum computing device and system
    7.
    发明授权
    Quantum computing device and system 有权

    公开(公告)号：US11812672B2

    公开(公告)日：2023-11-07

    申请号：US17227661

    申请日：2021-04-12

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Hyeokshin Kwon ,  Jaehyeong Lee ,  Insu Jeon

    IPC: H10N60/12 ,  G06N10/00 ,  H10N60/80

    CPC classification number: H10N60/12 ,  G06N10/00 ,  H10N60/805

    Abstract: Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure.

    Josephson junction device and method of manufacturing the same
    8.
    发明授权
    Josephson junction device and method of manufacturing the same 有权

    公开(公告)号：US11349059B2

    公开(公告)日：2022-05-31

    申请号：US17015512

    申请日：2020-09-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaehyeong Lee ,  Hyeokshin Kwon

    IPC: H01L39/02 ,  H01L39/12 ,  H01L39/24 ,  H01L39/22

    Abstract: A Josephson junction device includes a planar arrangement including a first two-dimensional (2D) material layer, a graphene layer, and a second 2D material layer planarly arranged on a device substrate, the first 2D material layer including at least one layer of a 2D material, the graphene layer forming a first junction with the first 2D material layer, and the second 2D material layer forming a second junction with the graphene layer and including at least one layer of a 2D material. A distance between the first junction and the second junction is within a range configured to cause a Josephson effect.

    Silicene electronic device
    9.
    发明授权
    Silicene electronic device 有权

    公开(公告)号：US11245021B2

    公开(公告)日：2022-02-08

    申请号：US17028205

    申请日：2020-09-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngtek Oh ,  Jinwook Jung ,  Hyeokshin Kwon ,  Wontaek Seo ,  Insu Jeon

    IPC: H01L29/45 ,  H01L29/786 ,  H01L29/16

    Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

    Silicene electronic device
    10.
    发明授权
    Silicene electronic device 有权

    公开(公告)号：US10818765B2

    公开(公告)日：2020-10-27

    申请号：US16356378

    申请日：2019-03-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngtek Oh ,  Jinwook Jung ,  Hyeokshin Kwon ,  Wontaek Seo ,  Insu Jeon

    IPC: H01L29/45 ,  H01L29/16 ,  H01L29/786

    Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

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